Datasheet > B772

B772

更新时间： 2024-10-01 14:55:03

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	2564K
描述
SOT-89-3L

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中文翻译

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数据手册

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B772 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

B772 TRANSISTOR（PNP）

FEATURE

Low speed switching

MARKING

SOT-89-3L

B772ꢀ'ꢁ#ꢂ"ꢁꢃ"ꢄꢅꢁꢃ

Solid dot = Green molding compound

1. BASE

device.

ꢃ

2. ^COLLETOR

3. ^EMITTER

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-40

-30

-6

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Equivalent Circuit

Collector Current -Continuous

Collector Power Dissipation

Thermal Resistance, Junction to Ambient

-3

P_C

0.5

250

℃

R_ӨJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=-100μA ,I_E=0

I_C= -10mA , I_B=0

I_E= -100μA,I_C=0

V_CB= -40V, I_E=0

V_CE=-30V, I_B=0

V_EB=-6V, I_C=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-40

-30

-6

-1

-10

-1

μA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

DC current gain

h_FE

V_CE= -2V, I_C= -1A

I_C=-2A, I_B= -0.2A

400

-0.5

Collector-emitter saturation voltage

V_CE(sat)

Base-emitter saturation voltage

V_BE(sat)

I_C=-2A, I_B= -0.2A

-1.5

_CE= -5V, I_C=-0.1A

Transition frequency

f_T

MHz

f =10MHz

CLASSIFICATION OF h_FE

Rank

200-400

Range

60-120

100-200

160-320

www.jscj-elec.com

Rev. - 2.4

12 3 4

中文翻译

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