Datasheet > B5819WSZ

B5819WSZ

更新时间： 2024-11-14 14:53:43

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1036K
描述
SOD-323

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中文翻译

获取价格

数据手册

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B5819WSZ 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOD-323 Plastic-Encapsulate Diodes

B5817WSZ-5819WSZ SCHOTTKY BARRIER DIODE

SOD-323

FEATURES

For use in low voltage, high frequency inverters

Free wheeling, and polarity protection applications

MARKING:

B5817WSZ:SJ

B5818WSZ:SK B5819WSZ:SL

The marking bar indicates the cathode

Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃

Unit

Parameter

Symbol

B5817WSZ B5818WSZ B5819WSZ

Non-repetitive peak reverse voltage

V_RM

V_RRM

V_RWM

V_R

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

RMS reverse voltage

V_R(RMS)

I_O

Average rectified output current

Non-repetitive Peak Forward Surge Current

I_FSM

@t=8.3ms

Repetitive peak forward current

Power dissipation

I_FRM

1.5

250

Thermal resistance junction to

ambient

R_θJA

400

℃/W

℃

-40~+125

-55~+150

OperationJunction temperature Range

Storage temperature Range

T_STG

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

I_R= 1mA

B5817WSZ

B5818WSZ

B5819WSZ

B5817WSZ

B5818WSZ

B5819WSZ

Reverse breakdown voltage

V_(BR)

V_R=20V

V_R=30V

V_R=40V

Reverse voltage leakage current

I_R

B5817WSZ I_F=1A

I_F=3A

0.45

0.75

0.55

0.875

0.6

B5818WSZ I_F=1A

I_F=3A

Forward voltage

V_F

B5819WSZ I_F=1A

I_F=3A

0.9

Diode capacitance

C_D

V_R=4V, f=1MHz

120

www.jscj-elec.com

Rev. - 1.1

12 3 4

中文翻译

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