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B5819W PDF预览

B5819W

更新时间: 2024-01-23 16:03:23
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 358K
描述
1 Amp Schottky Barrier Rectifier 20 - 40 Volts

B5819W 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.64
其他特性:FREE WHEELING DIODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.25 W最大重复峰值反向电压:40 V
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

B5819W 数据手册

 浏览型号B5819W的Datasheet PDF文件第2页浏览型号B5819W的Datasheet PDF文件第3页 
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
M C C  
B5817W  
Thru  
B5819W  
TM  
Micro Commercial Components  
Features  
·
Guard Ring Protection  
Low Forward Voltage Drop  
For Use in Low Voltage, High Frequency Inverters  
Power Dissipation:250mW  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Lead Free Finish/RoHS Compliant("P" Suffix  
designates RoHS Compliant. See ordering information)  
1 Amp Schottky  
Barrier Rectifier  
20 - 40 Volts  
·
SOD-123  
A
Maximum Ratings  
B
Operating Temperature: -65R to +125R  
Storage Temperature: -65R to +150R  
Maximum Thermal Resistance; 500K/W Junction To Ambient  
C
E
Maximum  
Recurrent  
Marking Peak Reverse  
Voltage  
Maximum  
DC  
Blocking  
Voltage  
20V  
30V  
40V  
Maximum  
RMS  
Voltage  
MCC  
Part  
Number  
B5817W  
B5818W  
B5819W  
Device  
H
D
SJ  
SK  
SL  
20V  
30V  
40V  
14V  
21V  
28V  
J
G
DIMENSIONS  
INCHES  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
MM  
MAX  
DIM  
NOTE  
Average Forward  
Current  
IF(AV)  
1.0A  
Tc = 90R  
MIN  
MAX  
.152  
.112  
.071  
.053  
.031  
-----  
.01  
MIN  
A
B
C
D
E
G
H
J
.140  
.100  
.055  
-----  
.012  
.006  
-----  
-----  
3.55  
2.55  
1.40  
-----  
0.30  
0.15  
-----  
-----  
3.85  
2.85  
1.80  
1.35  
.78  
-----  
.25  
.15  
Peak Forward Surge  
Current  
IFSM  
10A  
8.3ms, half sine  
Maximum  
0.45V  
0.55V  
0.60V  
0.75V  
0.875V  
0.90V  
IFM = 1.0A;  
TJ = 25R  
Instantaneous  
Forward Voltage  
B5817W  
VF  
IFM = 3A;  
.006  
B5818W  
B5819W  
TJ = 25R  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
0.093"  
TA = 25R  
1mA  
IR  
0.048"  
Typical junction  
capacitance  
Measured at  
1.0MHz , VR=4.0V  
CJ  
120pF  
0.036”  
www.mccsemi.com  
Revision:  
A
2011/01/01  
1 of 3  

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