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B5818W PDF预览

B5818W

更新时间: 2024-02-02 22:52:21
品牌 Logo 应用领域
顺烨 - SHUNYE 肖特基二极管
页数 文件大小 规格书
2页 948K
描述
SCHOTTKY DIODE

B5818W 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.66
二极管类型:RECTIFIER DIODEJESD-609代码:e3
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Matte Tin (Sn)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

B5818W 数据手册

 浏览型号B5818W的Datasheet PDF文件第2页 
B5817W THRU B5819W  
SCHOTTKY DIODE  
SOD-123  
FEATURES  
1.65(.065)  
1.55(.061)  
1.80(.071)  
1.40(.055)  
For use in low voltage, high frequency inverters  
Free wheeling, and polanty protection applications  
3.86(0.152)  
3.56(0.145)  
3.9(0.154)  
3.7(0.146)  
2.84(0.112)  
2.54(0.100)  
2.7(0.106)  
2.6(0.102)  
MECHANICAL DATA  
.71(0.028)  
.50(0.020)  
0.6(.023)  
0.5(.020)  
Case: Molded plastic body  
.15(.006)  
MAX  
1.35(.053)  
.94(.037)  
.135(.005)  
.127(.004)  
1.15(.045)  
1.05(.041)  
Terminals: Plated leads solderable per MIL-STD-750,  
Method 2026  
Polarity: Polarity symbols marked on case  
Marking: B5817W:SJ, B5818W:SK, B5819W:SL  
.25(.010)  
MIN  
Dimensions in millimeters and (inches)  
Maximum ratings and electrical characteristics, Single diode @TA=25C  
SYMBOLS  
UNITS  
PARAMETER  
Peak repetitive peak reverse voltage  
Working peak reverse voltage  
DC Blocking voltage  
B5817W  
B5818W  
B5819W  
VRRM  
VRWM  
VR  
V
20  
14  
30  
40  
28  
RMS Reverse voltage  
VR(RMS)  
IO  
V
A
21  
Average rectified output current  
Peak forward surge current @=8.3ms  
Repetitive peak forward current  
Power dissipation  
Thermal resistance junction to ambient  
Storage temperature  
1
25  
A
IFSM  
IFRM  
625  
mA  
mW  
K/W  
C
250  
Pd  
RΘJA  
500  
TSTG  
-65 to +150  
30  
Non-Repetitive peak reverse voltage  
Electrical ratings @TA=25C  
VRM  
20  
40  
V
SYMBOLS  
Min.  
Max.  
Unit  
V
Test conditions  
PARAMETER  
Reverse breakdown voltage  
20  
30  
40  
B5817W  
IR=1mA  
B5818W  
B5819W  
V(BR)  
V
V
VR=20V  
VR=30V  
VR=40V  
B5817W  
B5818W  
B5819W  
Reverse voltage leakage current  
Forward voltage  
1
IR  
mA  
0.45  
0.75  
0.55  
0.875  
0.6  
B5817W  
B5818W  
B5819W  
V
V
IF=1A  
IF=3A  
VF  
V
0.9  
CD  
120  
VR=4V,f=1.0MHz  
pF  
Diode capacitance  
www.shunyegroup.com  

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