Datasheet > B5817WV

B5817WV

更新时间： 2024-10-02 18:05:03

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
4页	465K
描述
Reverse Voltage Vr : 20 V;Forward Current Io : 1.0 A;Max Surge Current : 9.0 A;Forward Voltage Vf : 0.45 V;Reverse Current Ir : 50 uA;Recovery Time : N/A;Package / Case : SOD-123;Mounting Style : SMD/SMT;Certified (AEC-Q101...etc) : AEC-Q101

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中文翻译

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数据手册

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B5817WV 数据手册

B5817WV

B5818W

B5819WV

SOD-123 Plastic-Encapsulate

Schottky Barrier Diode

Features

High Current Capability

Low Forward Voltage Drop

P/N suffix V means AEC-Q101 qualified, e.g:B5817WV

suffix V means Halogen-free

P/N

Marking: B5817W: SJ

Mechanical Data

B5818W: SK

B5819W: SL

SOD-123 Small Outline Plastic Package

Polarity: Color band denotes cathode end

Mounting Position: Any

Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.)

Parameters

Symbol

Unit

B5817W

B5818W B5819W

VRRM

VRMS

VDC

1.0

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

IFM

Maximum average forward rectified current

IFSM

I²T

Peak forward surge current 8.3 ms single half

sine-wave

0.336

A S

Typical Current Squared Time

RθJA

250

500

Typical thermal resistance

Power Dissipation

TSTG

-50-+125

Storage temperature range

Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified).

B5818W

B5817W

B5819W

Parameters

Symbol

Test conditions

Unit

IF = 0.5A

IF = 1.0A

IF = 3.0A

0.450

0.550

0.875

0.450

0.600

0.900

0.450

Maximum forward voltage

0.750

Maximum reverse breakdown voltage

Maximum reverse current

IR=1mA

1.0

120

VR=20V B5817W

VR=30V B5818W

VR=40V B5819W

Type junction capacitance

VR = 4.0V, f = 1MHz

2023-07/08/03

REV:A

12 3 4

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