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B5817WSV PDF预览

B5817WSV

更新时间: 2024-10-02 18:05:03
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
5页 358K
描述
Reverse Voltage Vr : 20 V;Forward Current Io : 1.0 A;Max Surge Current : 9.0 A;Forward Voltage Vf : 0.45 V;Reverse Current Ir : 1000 uA;Recovery Time : N/A;Package / Case : SOD-323;Mounting Style : SMD/SMT;Certified (AEC-Q101...etc) : AEC-Q101

B5817WSV 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.65二极管类型:RECTIFIER DIODE
Base Number Matches:1

B5817WSV 数据手册

 浏览型号B5817WSV的Datasheet PDF文件第2页浏览型号B5817WSV的Datasheet PDF文件第3页浏览型号B5817WSV的Datasheet PDF文件第4页浏览型号B5817WSV的Datasheet PDF文件第5页 
B5817WSV  
V
B5818WS  
B5819WSV  
Plastic-Encapsulate Schottky Barrier Diode  
SOD-323  
Features  
High Current Capability  
Low Forward Voltage Drop  
P/N suffix V means AEC-Q101 qualified, eg.B5817WSV  
P/N suffix V means Halogen-free  
Marking: B5817WS: SJ  
B5818WS: SK  
B5819WS: SL  
Solid dot = Green molding compound device  
Mechanical Data  
SOD-323 Small Outline Plastic Package  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Maximum Ratings & Thermal Characteristics (Ratings at 25ć ambient temperature unless otherwise specified.)  
Parameters  
Symbol B5817WS B5818WS B5819WS  
Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
20  
14  
20  
30  
21  
30  
1.0  
40  
28  
40  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current  
IFM  
Peak forward surge current 8.3 ms single half  
sine-wave  
IFSM  
9
A
I2T  
2
Typical Current Squared Time  
0.337  
400  
A S  
Typical thermal resistance  
Power Dissipation  
RθJA  
ć/W  
PD  
Tj  
250  
125  
P:ꢀ  
ć
Operating junction temperature  
Storage temperature range  
TSTG  
-50-+150  
ć
Electrical Characteristics (Ratings at 25ć ambient temperature unless otherwise specified).  
B5817WS B5818WS B5819WS  
ons  
Test conditi  
Parameters  
Symbol  
Unit  
IF = 1.0A  
IF = 3.0A  
0.450  
0.750  
0.550  
0.875  
0.600  
0.900  
Maximum forward voltage  
VF  
V
V
Maximum reverse breakdown voltage  
VR  
IR=1mA  
20  
30  
1.0  
120  
40  
VR=20V B5817WS  
VR=30V B5818WS  
VR=40V B5819WS  
Maximum reverse current  
Type junction capacitance  
IR  
Cj  
mA  
pF  
VR = 4.0V, f = 1MHz  
2021-09/11  
REV:A  

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