Datasheet > B5817WS

B5817WS

更新时间： 2023-12-06 20:11:49

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1188K
描述
SOD-323

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中文翻译

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数据手册

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B5817WS 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOD-323 Plastic-Encapsulate Diodes

B5817WS-5819WS

FEATURES

SCHOTTKY BARRIER DIODE

SOD-323

For use in low voltage, high frequency inverters

Free wheeling, and polarity protection applications

MARKING:

B5817WS:SJ

B5818WS:SK

B5819WS:SL

The marking bar indicates the cathode

Solid dot = Green molding compound device.

Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃

Unit

Parameter

Symbol

B581

B5817WS

8WS B5819WS

Non-repetitive peak reverse voltage

V_RM

V_RRM

V_RWM

V_R

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

RMS reverse voltage

V_R(RMS)

I_O

Average rectified output current

Non-repetitive Peak Forward Surge Current

I_FSM

I_FRM

@t=8.3ms

Repetitive peak forward current

Power dissipation

1.5

250

Thermal resistance junction to

ambient

R_θJA

400

125

℃/W

Operating Junction Temperature Range

Storage Temperature Range

℃

T_STG

-55~+150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unles s other wise specified)

Parameter

Symbol

Test conditions

Min

Max

Unit

I_R= 1mA

B5817WS

Reverse breakdown voltage

V_(BR)

B5818WS

B5819WS

B5817WS

B5818WS

B5819WS

V_R=20V

V_R=30V

V_R=40V

Reverse voltage leakage current

Forward voltage

I_R

B5817WS

B5818WS

B5819WS

I_F=1A

I_F=3A

I_F=1A

I_F=3A

I_F=1A

I_F=3A

0.45

0.75

0.55

0.875

0.6

V_F

0.9

Diode capacitance

C_D

V_R=4V, f=1MHz

120

www.jscj-elec.com

Rev. - 2.2

12 3 4

中文翻译

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