Datasheet > B5817WRBG

B5817WRBG

更新时间： 2022-02-26 11:17:51

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
5页	149K
描述
SOD-123 40V/1A Schottky Diode

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数据手册

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B5817WRBG 数据手册

B5817W/B5818W/B5819W

Taiwan Semiconductor

Small Signal Product

SOD-123 40V/1A Schottky Diode

FEATURES

- Low Forward Voltage Drop

- Surface Mounted Device

- Moisture sensitivity level 1

- Pb free and RoHS compliant

MECHANICAL DATA

- Case: Bend lead SOD-123 package

- High temperature soldering guaranteed: 260°C/10s

- Weight: 10mg (approximately)

SOD-123

APPLICATION

Low voltage, high frequency inverters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

VALUE

B5818W

PARAMETER

SYMBOL

UNIT

B5817W

B5819W

Non-Peak Repetitive Reverse Voltage

V_RM

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

V_R(RMS)

I_O

Average Rectified Output Currect

Peak Forward Surge Current @t=8.3ms

Repetitive Peak Forward Current

Power Dissipation

I_FSM

I_FRM

P_D

1.5

500

^oC/W

^oC

Thermal Resistance form Junction to Ambient

Junction Temperature

R_thjA

T_J

250

125

Storage Temperature Range

T_STG

- 55 to + 150

PARAMETER

TEST CONDITION

MIN

MAX

SYMBOL

UNIT

B5817W

at I_R= 1 mA

V_(BR)

Reverse Breakdown Voltage

B5818W

B5819W

B5817W

B5818W

B5819W

at V_R= 20 V

at V_R= 30 V

at V_R= 40 V

at I_F= 1A

I_R

Reverse Voltage Leakage Curren

0.45

0.75

0.55

0.875

0.6

B5817W

B5818W

B5819W

at I_F= 3A

at I_F= 1A

V_F

Forward Voltage

at I_F= 3A

at I_F= 1A

at I_F= 3A

0.9

V_R=4V, f=1.0MHz

Diode Capacitance

C_D

120

Version: A14

Document Number: DS_S1404018

12 3 4 5

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