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B4S

更新时间： 2024-11-30 14:54:27
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 44K
描述
SMD

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中文翻译

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B4S 数据手册

 浏览型号B4S的Datasheet PDF文件第2页浏览型号B4S的Datasheet PDF文件第3页浏览型号B4S的Datasheet PDF文件第4页 
®
B1S – B10S  
0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER  
WON-TOP ELECTRONICS  
Features  
G
Glass Passivated Die Construction  
Low Forward Voltage Drop  
High Reliability  
High Surge Current Capability  
Design for Surface Mount Application  
Plastic Material – UL Flammability 94V-0  
Recognized File # E157705  
L
-
+
B
E
~
~
D
C
A
K
MB-S  
Dim  
A
Min  
4.50  
3.60  
0.15  
—
Max  
4.90  
4.00  
0.35  
0.20  
7.00  
1.10  
2.70  
2.60  
0.84  
Mechanical Data  
J
B
Case: MB-S, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
C
D
E
—
Polarity: As Marked on Case  
Weight: 0.12 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
G
J
0.70  
2.30  
2.20  
0.56  
K
L
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
B1S  
B2S  
B4S  
B6S  
B8S  
B10S  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
100  
70  
200  
140  
400  
280  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current (Note 1) @TA = 40°C  
Average Rectified Output Current (Note 2) @TA = 40°C  
0.8  
0.5  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single Half Sine-Wave Superimposed on Rated Load  
(JEDEC Method)  
IFSM  
VFM  
35  
A
V
Forward Voltage per diode  
@IF = 0.4A  
@IF = 0.8A  
1.0  
1.1  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 125°C  
5.0  
500  
IRM  
CJ  
µA  
pF  
Typical Junction Capacitance per diode (Note 3)  
13  
Thermal Resistance Junction to Ambient (Note 2)  
Thermal Resistance Junction to Ambient (Note 1)  
Thermal Resistance Junction to Lead (Note 2)  
RθJA  
RθJA  
RθJL  
134  
76  
20  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Mounted on aluminum substrate PCB with 1.3 x 1.3mm pad areas.  
2. Mounted on glass epoxy PCB with 1.3 x 1.3mm pad areas.  
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1
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