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B350A-E3/61T PDF预览

B350A-E3/61T

更新时间: 2024-11-11 21:21:23
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线光电二极管
页数 文件大小 规格书
4页 322K
描述
DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode

B350A-E3/61T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.28
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.62 V
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:50 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:50 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

B350A-E3/61T 数据手册

 浏览型号B350A-E3/61T的Datasheet PDF文件第2页浏览型号B350A-E3/61T的Datasheet PDF文件第3页浏览型号B350A-E3/61T的Datasheet PDF文件第4页 
B350A, B360A  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount Schottky Barrier Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Low forward voltage drop, low power losses  
• High efficiency  
• High surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
DO-214AC (SMA)  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
3.0 A  
50 V, 60 V  
50 A  
VRRM  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
IFSM  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
VF at IF = 3.0 A  
TJ max.  
0.55 V  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
B350A  
B35  
B360A  
B36  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
VRRM  
IF(AV)  
50  
60  
V
A
Maximum average forward rectified current (fig. 1)  
3.0  
50  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Revision: 27-Mar-12  
Document Number: 89071  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

B350A-E3/61T 替代型号

型号 品牌 替代类型 描述 数据表
B350A-M3/61T VISHAY

完全替代

DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLAS
B350A-M3/5AT VISHAY

类似代替

DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLAS

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