B3150C - B3200C
SURFACE MOUNT SCHOTTKY BARRIER DIODES
VOLTAGE RANGE: 150-200V
CURRENT: 3.0 A
Features
!
!
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
!
!
High Current Capability
Low Power Loss, High Efficiency
!
!
High Surge Current Capability
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
SMC/DO-214AB
B
Dim
A
Min
5.59
6.60
2.75
0.15
7.75
0.10
0.76
2.00
Max
6.22
7.11
3.18
0.31
8.13
0.20
1.52
2.62
Mechanical Data
B
A
J
C
! Case: SMC/DO-214AB, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
C
D
E
D
! Polarity: Cathode Band or Cathode Notch
G
H
! Marking: Type Number
! Weight: 0.21 grams (approx.)
J
G
H
E
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
TA = 25ꢀC unless otherwise specified
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Symbol
Unit
Characteristic
B3200C
B3150C
200
Volts
Volts
Volts
VRRM
150
Maximum repetitive peak reverse voltage
Maximum RMS voltage
140
200
VRMS
VDC
105
150
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length(see fig.1)
Peak forward surge current
I(AV)
3.0
Amps
IFSM
80.0
0.95
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
VF
IR
Maximum instantaneous forward voltage at 3.0A
Volts
mA
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
0.2
2.0
TA=100 C
Typical junction capacitance (NOTE 1)
CJ
pF
C/W
C
160
40.0
-65 to +150
Typical thermal resistance (NOTE 2)
Operating junction temperature range
RθJA
TJ,
Storage temperature range
C
TSTG
-65 to +150
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
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