Datasheet > B3200A

B3200A

更新时间： 2022-02-04 08:17:33

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森美特 - SUNMATE		/
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描述
3.0A Patch Schottky diode 200V SMA series

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B3200A 数据手册

B3150A - B3200A

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE: 150-200V

CURRENT: 3.0 A

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

High Current Capability

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

SMA(DO-214AC)

Dim

MinMax

2.29

4.00

1.27

0.15

4.80

0.10

0.76

2.01

2.92

4.60

1.63

0.31

5.59

0.20

1.52

2.62

Mechanical Data

Case: SMA/DO-214AC, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Symbol

Characteristic

B3200A

Unit

B3150A

Volts

Maximum repetitive peak reverse voltage

Maximum RMS voltage

200

140

200

VRRM

VRMS

VDC

150

105

150

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length(see fig.1)

Peak forward surge current

I(AV)

3.0

Amps

IFSM

80.0

0.95

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

Maximum instantaneous forward voltage at 3.0A

Volts

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

0.2

2.0

TA=100 C

Typical junction capacitance (NOTE 1)

C/W

160

40.0

-65 to +150

Typical thermal resistance (NOTE 2)

Operating junction temperature range

RθJA

TJ,

Storage temperature range

TSTG

-65 to +150

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

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