Datasheet > B2020W

B2020W

更新时间： 2023-12-06 20:08:36

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1738K
描述
SOD-123

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中文翻译

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数据手册

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B2020W 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOD-123 Plastic-Encapsulate Diodes

SOD-123

B2020W

SCHOTTKY BARRIER DIODE

FEATURES

Low Forward Voltage Drop

Very Small SMD Package

APPLICATIONS

Low Voltage Rectification

High Efficiency DC/DC Conversion

Switch Mode Power Supply

Inverse Polarity Protection

Low Power Consumption Applications

MARKING: SH

The marking bar indicates the cathode

Solid dot = Green molding compound device.

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Symbol

V_RRM

V_RWM

V_R(RMS)

I_F

Parameter

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

RMS Reverse Voltage

Value

Unit

Continuous Forward Current

Non-repetitive Peak Forward Surge Current @ t=8.3ms

I_FSM

Power Dissipation

Note1

300

℃/W

℃

P_D

Note2

Note1

Note2

670

Thermal Resistance from Junction to Ambient

333

R_ΘJA

149

Operating Junction Temperature Range

-40 ~ +125

-55 ~ +150

T_j

Storage Temperature Range

T_stg

℃

1:Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

2:Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm².

ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Reverse breakdown voltage

V_(BR)

I_R=1mA

V_R=10V

V_R=20V

I_F=1A

Reverse current

Forward voltage

I_R

μA

100

0.45

V_F*

C_tot

I_F=2A

0.55

120

Total capacitance

V_R=4V,f=1MHz

*Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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