Datasheet > B160A-E3/61T

B160A-E3/61T

更新时间： 2022-12-01 19:33:58

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	71K
描述
DIODE 1 A, 60 V, SILICON, SIGNAL DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Signal Diode

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B160A-E3/61T 数据手册

B120A thru B160A

Vishay General Semiconductor

Preliminary

Surface Mount Schottky Barrier Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Guardring for overvoltage protection

• Low power losses, high efficiency

• Low forward voltage drop

• Meets MSL level 1, per J-STD-020C, LF max peak

DO-214AC (SMA)

of 260 °C

• Solder Dip 260 °C, 40 seconds

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage, high frequency inverters, free-

wheeling, dc-to-dc converters, and polarity protection

applications.

MAJOR RATINGS AND CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

1.0 A

20 V to 60 V

30 A

MECHANICAL DATA

Case: DO-214AC (SMA)

V_F

0.50 V, 0.75 V

125 °C, 150 °C

T_jmax.

Epoxy meets UL-94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL B120A

B130A

B13

B140A

B14

B150A

B15

B160A

B16

UNIT

Device marking code

B12

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

Maximum average forward rectified current at T_L(see Fig. 1)

I_F(AV)

1.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Voltage rate of change (rated V_R)

Operating junction temperature range

Storage temperature range

dv/dt

T_J

10000

V/µs

°C

- 65 to + 125

- 65 to + 150

T_STG

- 65 to + 150

°C

Document Number 88905

06-Jul-06

www.vishay.com

12 3 4

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