Power Transistors
2SB1156
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1707
Unit: mm
Features
■
●
Low collector to emitter saturation voltage VCE(sat)
15.0±0.3
11.0±0.2
5.0±0.2
3.2
●
Satisfactory linearity of foward current transfer ratio hFE
●
Large collector current IC
φ3.2±0.1
2.0±0.2
●
Full-pack package which can be installed to the heat sink with
one screw
Absolute Maximum Ratings (T =25˚C)
■
C
2.0±0.1
0.6±0.2
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
1.1±0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
–130
5.45±0.3
–80
V
10.9±0.5
–7
–30
V
1
2
3
A
IC
–20
A
1:Base
2:Collector
3:Emitter
Collector power TC=25°C
100
PC
W
dissipation
Ta=25°C
3
TOP–3 Full Pack Package(a)
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
–10
–50
Unit
µA
µA
V
Collector cutoff current
Emitter cutoff current
VCB = –100V, IE = 0
IEBO
VCEO
hFE1
VEB = –5V, IC = 0
IC = –10mA, IB = 0
Collector to emitter voltage
–80
45
V
CE = –2V, IC = – 0.1A
*
Forward current transfer ratio
hFE2
VCE = –2V, IC = –3A
90
260
hFE3
VCE = –2V, IC = –10A
IC = –8A, IB = – 0.4A
IC = –20A, IB = –2A
30
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
– 0.5
–1.5
–1.5
–2.5
V
V
Collector to emitter saturation voltage
Base to emitter saturation voltage
IC = –8A, IB = – 0.4A
IC = –20A, IB = –2A
V
V
Transition frequency
Turn-on time
Storage time
Fall time
VCE = –10V, IC = – 0.5A, f = 10MHz
25
0.5
1.2
0.2
MHz
µs
ton
IC = –3A, IB1 = – 0.8A, IB2 = 0.8A,
VCC = –50V
tstg
µs
tf
µs
*hFE2 Rank classification
Rank
hFE2
Q
P
90 to 180
130 to 260
Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification.
1