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B1156 PDF预览

B1156

更新时间: 2022-01-13 13:05:30
品牌 Logo 应用领域
松下 - PANASONIC 开关
页数 文件大小 规格书
3页 63K
描述
Silicon PNP epitaxial planar type(For power switching)

B1156 数据手册

 浏览型号B1156的Datasheet PDF文件第2页浏览型号B1156的Datasheet PDF文件第3页 
Power Transistors  
2SB1156  
Silicon PNP epitaxial planar type  
For power switching  
Complementary to 2SD1707  
Unit: mm  
Features  
Low collector to emitter saturation voltage VCE(sat)  
15.0±0.3  
11.0±0.2  
5.0±0.2  
3.2  
Satisfactory linearity of foward current transfer ratio hFE  
Large collector current IC  
φ3.2±0.1  
2.0±0.2  
Full-pack package which can be installed to the heat sink with  
one screw  
Absolute Maximum Ratings (T =25˚C)  
C
2.0±0.1  
0.6±0.2  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
1.1±0.1  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
–130  
5.45±0.3  
–80  
V
10.9±0.5  
–7  
–30  
V
1
2
3
A
IC  
–20  
A
1:Base  
2:Collector  
3:Emitter  
Collector power TC=25°C  
100  
PC  
W
dissipation  
Ta=25°C  
3
TOP–3 Full Pack Package(a)  
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
–10  
–50  
Unit  
µA  
µA  
V
Collector cutoff current  
Emitter cutoff current  
VCB = –100V, IE = 0  
IEBO  
VCEO  
hFE1  
VEB = –5V, IC = 0  
IC = –10mA, IB = 0  
Collector to emitter voltage  
–80  
45  
V
CE = –2V, IC = – 0.1A  
*
Forward current transfer ratio  
hFE2  
VCE = –2V, IC = –3A  
90  
260  
hFE3  
VCE = –2V, IC = –10A  
IC = –8A, IB = – 0.4A  
IC = –20A, IB = –2A  
30  
VCE(sat)1  
VCE(sat)2  
VBE(sat)1  
VBE(sat)2  
fT  
– 0.5  
–1.5  
–1.5  
–2.5  
V
V
Collector to emitter saturation voltage  
Base to emitter saturation voltage  
IC = –8A, IB = – 0.4A  
IC = –20A, IB = –2A  
V
V
Transition frequency  
Turn-on time  
Storage time  
Fall time  
VCE = –10V, IC = – 0.5A, f = 10MHz  
25  
0.5  
1.2  
0.2  
MHz  
µs  
ton  
IC = –3A, IB1 = – 0.8A, IB2 = 0.8A,  
VCC = –50V  
tstg  
µs  
tf  
µs  
*hFE2 Rank classification  
Rank  
hFE2  
Q
P
90 to 180  
130 to 260  
Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification.  
1

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