Datasheet > B1100LB_1

B1100LB_1

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
美台 - DIODES		高压
页数	文件大小	规格书
3页	68K
描述
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

B1100LB_1 数据手册

SPICE MODEL: B1100LB

B1100LB

1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

Surge Overload Rating to 50A Peak

SMB

Min

For Use in Low Voltage, High Frequency Inverters, Free

Wheeling, and Polarity Protection Application

Dim

Max

3.94

4.57

2.21

0.31

5.59

0.20

1.52

2.40

High Temperature Soldering:

260°C/10 Second at Terminal

3.30

4.06

1.96

0.15

5.00

0.10

0.76

2.00

Lead Free Finish/RoHS Compliant (Note 3)

Mechanical Data

Case: SMB

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Terminals: Lead Free Plating (Matte Tin Finish).

Solderable per MIL-STD-202, Method 208

All Dimensions in mm

Polarity: Cathode Band or Cathode Notch

Marking: B1100LB or B110LB and Date Code

Weight: 0.093 grams (approx.)

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

Value

100

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

@ I_R= 0.5mA

V_R(RMS)

RMS Reverse Voltage

Average Rectified Output Current

@ T_T= 120°C

@ T_T= 100°C

1.0

2.0

I_O

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave Superimposed on Rated Load

(JEDEC Method)

I_FSM

V_FM

I_RM

Forward Voltage

@ I_F= 1.0A, T_A= 25°C

0.75

Peak Reverse Current

at Rated DC Blocking Voltage

@ T_A25°C

0.5

5.0

@ T_A= 100°C

C_T

Typical Total Capacitance (Note 2)

100

°C/W

°C

R_qJT

Typical Thermal Resistance Junction to Terminal (Note 1)

Operating and Storage Temperature Range

T_j,T_STG

-65 to +150

Notes:

1. Valid provided that terminals are kept at ambient temperature.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.

DS30077 Rev. 6 - 2

1 of 3

B1100LB

www.diodes.com

ã Diodes Incorporated

12 3

下载PDF

与B1100LB_1相关器件

型号	品牌	描述	获取价格	数据表
B1100LB_10	DIODES	1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER	获取价格
B1100LB-13	DIODES	1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER	获取价格
B1100LB-13-F	DIODES	1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER	获取价格
B1100LB-7	DIODES	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, PLASTIC, SMB, 2 P	获取价格
B1100LB-FDITR	DIODES	1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER	获取价格
B1100LBT-01-13	DIODES	Rectifier Diode, 1 Phase, 1 Element, 1A, 100V V(RRM), Silicon, SMB, 2 PIN	获取价格