5秒后页面跳转
B1100F PDF预览

B1100F

更新时间: 2024-11-30 01:24:39
品牌 Logo 应用领域
WEITRON /
页数 文件大小 规格书
6页 1218K
描述
Reverse Voltage 20 to 200V Forward Current 1.0A

B1100F 数据手册

 浏览型号B1100F的Datasheet PDF文件第2页浏览型号B1100F的Datasheet PDF文件第3页浏览型号B1100F的Datasheet PDF文件第4页浏览型号B1100F的Datasheet PDF文件第5页浏览型号B1100F的Datasheet PDF文件第6页 
B120F thru B1200F  
Schottky Barrier Rectifiers  
Reverse Voltage 20 to 200V Forward Current 1.0A  
P b  
Lead(Pb)-Free  
FEATURES  
* Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
* Low power loss,high efficiency  
* For use in low voltage high frequency inverters,  
free wheeling,and polarity protection applications  
* Guardring for over voltage protection  
* High temperature soldering guaranteed:  
260°C/10 seconds at terminals  
Mechanical Data  
CATHODE  
ANODE  
Case: SOD-123FL/MINI SMA  
molded plastic over sky die  
Terminals: Tin Plated, solderable per  
MIL-STD-750, Method 2026  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
We declare that the material of product is  
Haloggen free (green epoxy compound)  
Weight: 0.0155g  
Handling precautin::None  
1.Electrical Characteristic  
Maximum & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
B120F B130F B140F B145F B150F B160F B180F B1100F B1150F B1200F  
Parameter Symbol  
symbol  
Unit  
V
device marking code  
12  
20  
13  
30  
14  
40  
145  
45  
15  
50  
16  
60  
18  
80  
110  
100  
115  
150  
120  
200  
Maximum repetitive peak reverse  
voltage  
VRRM  
Maximum RMS voltage  
VRMS  
VDC  
14  
20  
21  
30  
28  
40  
31.5  
45  
35  
50  
42  
60  
56  
80  
70  
105  
150  
140  
200  
V
V
Maximum DC blocking voltage  
100  
Maximum average forward rectified  
current at TC = 75°C  
1.0  
30  
IF(AV)  
A
Peak forward surge current 8.3ms  
single half sine-wave superimposed  
on rated load (JEDEC Method)  
IFSM  
A
110  
40  
RθJA  
RθJC  
Typical thermal resistance (Note 1)  
°C/W  
–55 to +150  
–65 to +175  
Operating junction temperature range TJ  
storage temperature range TSTG  
°C  
°C  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter Symbol  
symbol B120F B130F B140F  
B145F B150F  
B160F B180F B1100F B1150F B1200F Unit  
Maximum instantaneous forward  
voltage at(IF = 0.1 A, TJ = 25°C)  
(IF = 0.7 A, TJ = 25°C)  
-
-
-
-
-
-
-
-
0.35  
0.45  
0.50  
-
-
-
-
VF  
V
0.55  
0.7  
0.85  
(IF = 1.0 A, TJ = 25°C)  
0.5  
0.90  
0.92  
Maximum DC reverse current at rated  
DC blocking voltage TA = 25°C  
Tj = 125°C  
0.5  
10  
IR  
mA  
PF  
Typical junction capacitance at  
4.0V, 1MHz  
160  
CJ  
NOTES:  
1. 8.0mm2 (.013mm thick) land areas  
WEITRON  
http://www.weitron.com.tw  
28-May-2016  
1/6  

与B1100F相关器件

型号 品牌 获取价格 描述 数据表
B1100-FDITR DIODES

获取价格

1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
B1100-G WEITRON

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM),
B1100GD EVERLIGHT

获取价格

Optoelectronic Device
B1100ID EVERLIGHT

获取价格

Optoelectronic Device
B1100L SUNMATE

获取价格

1A Patch Schottky diode 100V SOD-123 series
B1100LB DIODES

获取价格

1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
B1100LB_1 DIODES

获取价格

1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
B1100LB_10 DIODES

获取价格

1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
B1100LB-13 DIODES

获取价格

1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
B1100LB-13-F DIODES

获取价格

1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER