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B1005-BD

更新时间： 2024-02-25 11:03:53
品牌 Logo 应用领域
MIMIX /
页数 文件大小 规格书
12页 722K
描述
35.0-45.0 GHz GaAs MMIC

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B1005-BD 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PDSO-G4针数：4
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.69
最小击穿电压：50 V配置：BRIDGE, 4 ELEMENTS
二极管元件材料：SILICON二极管类型：BRIDGE RECTIFIER DIODE
JESD-30 代码：R-PDSO-G4最大非重复峰值正向电流：30 A
元件数量：4相数：1
端子数量：4最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
最大重复峰值反向电压：50 V表面贴装：YES
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

B1005-BD 数据手册

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35.0-45.0 GHz GaAs MMIC  
Buffer Amplifier  
October 2008 - Rev 02-Oct-08  
B1005-BD  
Features  
Chip Device Layout  
High Dynamic Range  
Excellent LO Driver/Buffer Amplifier  
Low Noise or Power Bias Configurations  
23.0 dB Small Signal Gain  
2.7 dB Noise Figure at Low Noise Bias  
+16 dBm P1dB Compression at Power Bias  
100% On-Wafer RF, DC and Noise Figure Testing  
100% Commercial-Level Visual Inspection Using  
Mil-Std-883 Method 2010  
General Description  
Mimix Broadband’s three stage 35.0-45.0 GHz GaAs  
MMIC buffer amplifier has a small signal gain of 23.0  
dB with a noise figure of 2.7 dB across the band.This  
MMIC uses Mimix Broadband’s GaAs PHEMT device  
model technology, and is based upon electron beam  
lithography to ensure high repeatability and  
uniformity.The chip has surface passivation to protect  
and provide a rugged part with backside via holes  
and gold metallization to allow either a conductive  
epoxy or eutectic solder die attach process.This  
device is well suited for Millimeter-wave  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id)  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
+6.0 VDC  
180 mA  
+0.3 VDC  
+5 dBm  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Table  
5
5
Channel Temperature (Tch) MTTF Table  
(5) Channel temperature affects a device's MTBF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Point-to-Point Radio, SATCOM and VSAT applications.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Units  
GHz  
dB  
dB  
dB  
dB  
dB  
dB  
dBm  
dBm  
dBm  
VDC  
VDC  
mA  
Min.  
35.0  
4.0  
9.0  
20.0  
-
35.0  
-
-
Typ.  
-
8.0  
Max.  
45.0  
-
-
27.0  
-
-
3.5  
-
Frequency Range (f)  
Input Return Loss (S11)  
3
3
Output Return Loss (S22)  
17.0  
23.0  
+/-1.0  
45.0  
2.7  
+16.0  
+26.0  
+18.0  
+3.5  
-0.4  
3
Small Signal Gain (S21)  
Gain Flatness ( S21)  
Reverse Isolation (S12)  
3
4
Noise Figure (NF)  
1,2,3  
Output Power for 1 dB Compression (P1dB)  
Output Third Order Intercept Point (OIP3)  
1,2,3  
-
-
-
1,2,3  
Saturated Output Power (Psat)  
+16.0  
-1.2  
-
Drain Bias Voltage (Vd1,2,3)  
Gate Bias Voltage (Vg1,2,3)  
Supply Current (Id) (Vd=3.5V,Vg=-0.4V Typical)  
+4.5  
+0.1  
154  
50  
(1) Optional low noise bias Vd1,2,3=3.5V, Id=50mA will typically yield 3-4dB decreased P1dB and OIP3.  
(2) Measured using constant current.  
(3) Unless otherwise indicated Min/Max over 35.0-45.0 GHz and biased at Vd=4.5V, Id1=28mA, Id2=42mA, Id3=84mA.  
(4) Unless otherwise indicated Min/Max over 35.0-45.0 GHz and biased at Vd=3.5V, Id1=9mA, Id2=16mA, Id3=25mA.  
Page 1 of 12  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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