Datasheet > B0540WS

B0540WS

更新时间： 2024-11-20 09:07:03

品牌	Logo	应用领域
金誉半导体 - HTSEMI		肖特基二极管光电二极管
页数	文件大小	规格书
2页	430K
描述
SCHOTTKY BARRIER DIODE

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中文翻译

获取价格

数据手册

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B0540WS 数据手册

B0520WS/B0530WS/B0540WS

SOD-323

SCHOTTKY BARRIER DIODE

FEATURES

Low Forward Voltage Drop

Guard Ring Construction for Transi

High Conductance

ent Protection

Also Available in Lead Free Version

MARKING: B0520WS: SD

B0530WS: SE

B0540WS: SF

Maximum Ratings @T_A=25℃

Parameter

Symbol

V_RRM

V_RWM

V_R

B0520WS

B0530WS

B0540WS

Unit

Peak Repetitive Peak reverse voltage

Working Peak Reverse Voltage

DC Blocking

Voltage

RMS Reverse Voltage Reverse voltage (DC)

Average rectified output Current

Forward current surge peak

Power dissipation

V_R(RMS)

I_o

0.5

I_FSM

P_D

5.5

200

℃/W

℃

Thermal Resistance Junction to Ambient

Junction temperature

R_θJA

T_j

625

150

Storage temperature

T_STG

dv/dt

-65~+150

1000

℃

V/μS

Voltage Rate of Change

Electrical Characteristics @T_A=25℃

Parameter

Symbol

B0520WS

B0530WS

B0540WS

Unit

Conditions

I_R=250μA

I_R=500μA

I_R=20μA

I_F=0.1A

Minimum Reverse

V_(BR)R

Breakdown Voltage

Forward voltage

Reverse current

V_F1

V_F2

V_F3

I_R1

I_R2

I_R3

I_R4

I_R5

C_T

0.3

0.385

0.36

0.45

0.510

0.62

I_F=0.5A

I_F=1A

V_R=10V

V_R=15V

V_R=20V

V_R=30V

V_R=40V

μA

250

100

500

Reverse current

μA

170

Capacitance between terminals

170

V_R=0,f=1MHz

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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