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B0540WRH PDF预览

B0540WRH

更新时间: 2024-11-20 06:39:11
品牌 Logo 应用领域
TSC 二极管光电二极管瞄准线
页数 文件大小 规格书
2页 83K
描述
410mW, Low VF SMD Schottky Barrier Diode

B0540WRH 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.63Is Samacsys:N
其他特性:LOW POWER LOSS配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:0.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.41 W认证状态:Not Qualified
最大重复峰值反向电压:40 V表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

B0540WRH 数据手册

 浏览型号B0540WRH的Datasheet PDF文件第2页 
B0520LW,B0530W,B0540W  
410mW, Low VF SMD Schottky Barrier Diode  
Small Signal Diode  
SOD-123  
B
A
C
Features  
—Low power loss, high current capability, low VF  
—Surface device type mounting  
D
—Moisture sensitivity level 1  
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate  
—Pb free version and RoHS compliant  
E
F
—Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code  
G
Unit (mm)  
Unit (inch)  
Min Max  
0.059 0.067  
Dimensions  
Min  
1.50  
3.55  
0.45  
2.60  
1.05  
0.08  
Max  
Mechanical Data  
—Case : SOD-123 small outline plastic package  
A
B
C
D
E
F
1.70  
3.85 0.140 0.152  
0.65 0.018 0.026  
—Terminal: Matte tin plated, lead free., solderable  
per MIL-STD-202, Method 208 guaranteed  
—High temperature soldering guaranteed: 260°C/10s  
—Polarity : Indicated by cathode band  
2.80  
1.25  
0.15  
0.102 0.11  
0.041 0.049  
0.003 0.006  
0.50 REF  
—Weight :0.01 gram (approximately)  
G
0.02 REF  
Ordering Information  
Part No.  
Packing  
Package  
SOD-123  
B05xxW RH  
3 Kpcs / 7" Reel  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
PD  
B0520LW  
B0530W  
B0540W  
Units  
Power Dissipation  
410  
30  
mW  
V
Repetitive Peak Reverse Voltage  
Reverse Voltage  
VRRM  
VR  
20  
14  
40  
28  
21  
V
Repetitive Peak Forward Current  
Mean Forward Current  
IFRM  
500  
mA  
mA  
A
IO  
500  
Non-Repetitive Peak Forward Surge Current (Note 1)  
Thermal Resistance (Junction to Ambient) (Note 2)  
Junction and Storage Temperature Range  
IFSM  
5.5  
RθJA  
TJ, TSTG  
244  
°C/W  
°C  
-65 to + 125  
Electrical Characteristics  
Type Number  
Symbol  
B0520LW  
B0530W  
B0540W  
Units  
20  
-
-
IR= 250μA  
Reverse Breakdown Voltage  
V(BR)  
-
30  
-
V
IR= 130μA  
IR= 20μA  
-
-
40  
I =  
0.300  
0.375  
-
100mA Tj=25°C  
500mA Tj=25°C  
1000mA Tj=25°C  
100mA Tj=100°C  
500mA Tj=100°C  
1000mA Tj=100°C  
F
I =  
F
0.385  
0.430  
0.510  
I =  
F
-
-
0.620  
Forward Voltage  
VF  
V
I =  
F
0.220  
-
-
I =  
F
0.330  
-
0.460  
I =  
F
-
75  
-
-
0.610  
-
-
-
VR= 10V  
VR= 15V  
VR= 20V  
VR= 30V  
VR= 40V  
VR= 10V  
VR= 20V  
VR= 40V  
Tj=25°C  
Tj=25°C  
Tj=25°C  
Tj=25°C  
Tj=25°C  
Tj=100°C  
Tj=100°C  
Tj=100°C  
20  
250  
-
-
10  
-
μA  
130  
Reverse Leakage Current  
Junction Capacitance  
IR  
-
-
20  
-
5,0  
8.0  
-
-
-
-
5.0  
13  
mA  
pF  
VR=0V, f=1.0MHz  
CJ  
170  
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)  
Notes:2. Valid provided that electrodes are kept at ambient temperature  
Version : C09  

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