Datasheet > B0530WSRR

B0530WSRR

更新时间： 2024-01-26 13:14:51

品牌	Logo	应用领域
TSC		二极管
页数	文件大小	规格书
2页	77K
描述
200mW, Low VF SMD Schottky Barrier Diode

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中文翻译

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技术参数
数据手册

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B0530WSRR 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.62
JESD-609代码：	e3	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier	处于峰值回流温度下的最长时间：	NOT SPECIFIED

B0530WSRR 数据手册

B0530WS

200mW, Low V^FSMD Schottky Barrier Diode

Small Signal Diode

SOD-323F

Features

Low power loss, high current capability, low VF

Surface device type mounting

Moisture sensitivity level 1

Matte Tin(Sn) lead finish

Pb free version and RoHS compliant

Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

Unit (mm)

Unit (inch)

Dimensions

Min

Max

Min

Max

Mechanical Data

Case : Flat lead SOD-323 small outline plastic package

1.15 1.35 0.045 0.053

2.30 2.70 0.091 0.106

0.25 0.40 0.010 0.016

1.60 1.80 0.063 0.071

0.80 1.00 0.031 0.039

0.05 0.20 0.002 0.008

Terminal: Matte tin plated, lead free., solderable

per MIL-STD-202, Method 208 guaranteed

High temperature soldering guaranteed: 260°C/10s

Polarity : Indicated by cathode band

Weight : 4.85±0.5 mg

Ordering Information

Part No.

Packing

Package

B0530WS RR

3Kpcs/ 7" Reel

SOD-323F

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings

Type Number

Symbol

P^D

Value

200

Units

Power Dissipation

Repetitive Peak Reverse Voltage

Mean Forward Current

Non-Repetitive Peak Forward Surge Current

Pulse Width=

VRRM

I^O

500

I^FSM

5.0

8.3 mS

( Singal Half -wave )

Thermal Resistance (Junction to Ambient) (Note 1)

Junction and Storage Temperature Range

RθJA

426

°C/W

°C

TJ, TSTG

-65 to + 150

Electrical Characteristics

Type Number

Symbol

Min

Max

Units

V^(BR)

Reverse Breakdown Voltage

IR=

500uA

100mA

500mA

15V

0.36

0.47

I^F=

Forward Voltage

V^F

I^F=

V^R=

Reverse Leakage Current

Junction Capacitance

I^R

100

500

58.0

20V

30V

C^J

V^R=0, f=1.0MHz

Notes:1. Valid provided that electrodes are kept at ambient temperature

Version : E10

中文翻译

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