5秒后页面跳转
AZ23B4V3 PDF预览

AZ23B4V3

更新时间: 2024-02-06 11:33:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 195K
描述
DIODE 4.3 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC PACKAGE-3, Voltage Regulator Diode

AZ23B4V3 技术参数

生命周期:Obsolete包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.68配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:R-PDSO-G3元件数量:2
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
最大功率耗散:0.3 W认证状态:Not Qualified
标称参考电压:4.3 V表面贴装:YES
技术:ZENER端子形式:GULL WING
端子位置:DUAL最大电压容差:2.09%
工作测试电流:5 mABase Number Matches:1

AZ23B4V3 数据手册

 浏览型号AZ23B4V3的Datasheet PDF文件第2页浏览型号AZ23B4V3的Datasheet PDF文件第3页浏览型号AZ23B4V3的Datasheet PDF文件第4页浏览型号AZ23B4V3的Datasheet PDF文件第5页浏览型号AZ23B4V3的Datasheet PDF文件第6页浏览型号AZ23B4V3的Datasheet PDF文件第7页 
AZ23-Series  
Vishay Semiconductors  
VISHAY  
Small Signal Zener Diodes, Dual  
Features  
• These diodes are also available in other case  
styles and configurations including: the dual diode  
common cathode configuration with type designa-  
tion DZ23, the single diode SOT-23 case with the  
type designation BZX84C, and the single diode  
SOD-123 case with the type designation BZT52C.  
3
1
2
18070  
• Dual Silicon Planar Zener Diodes, Common  
Anode  
• The Zener voltages are graded according to the  
international E 24 standard.  
• The parameters are valid for both diodes in one  
case. VZ and rzj of the two diodes in one case  
is 5 %  
Mechanical Data  
Case: SOT-23 Plastic case  
Weight: approx. 8.8 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13 " reel, (8 mm tape), 10 k/box  
GS08 / 3 k per 7 " reel, (8 mm tape), 15 K/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
mW  
1)  
Power dissipation  
P
tot  
300  
1)  
Device on fiberglass substrate, see layout  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
1)  
Thermal resistance junction to ambient air  
Junction temperature  
R
°C/W  
thJA  
420  
T
150  
°C  
°C  
j
Storage temperature range  
T
- 65 to + 150  
S
1)  
Device on fiberglass substrate, see layout  
Document Number 85759  
Rev. 1.4, 08-Jul-04  
www.vishay.com  
1

与AZ23B4V3相关器件

型号 品牌 描述 获取价格 数据表
AZ23-B4V3/E8 VISHAY DIODE 4.3 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB, PLASTIC PAC

获取价格

AZ23-B4V3/E9 VISHAY DIODE 4.3 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB, PLASTIC PAC

获取价格

AZ23B4V3-E3-08 VISHAY DIODE ZENER 4.3V 300MW SOT23

获取价格

AZ23B4V3-E3-18 VISHAY DIODE ZENER 4.3V 300MW SOT23

获取价格

AZ23-B4V3E8 VISHAY DIODE 4.3 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB, Voltage Reg

获取价格

AZ23B4V3-E8 VISHAY DIODE 4.3 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC PACKAGE-3, Vo

获取价格