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AWU6604RM45P9 PDF预览

AWU6604RM45P9

更新时间: 2024-11-24 06:38:47
品牌 Logo 应用领域
ANADIGICS 射频微波
页数 文件大小 规格书
13页 548K
描述
HELP3TM Band 4 & 9 WCDMA 3.4 V / 28.25 dBm Linear PA Module

AWU6604RM45P9 技术参数

是否Rohs认证:符合生命周期:Transferred
包装说明:SOLCC10,.11,24Reach Compliance Code:unknown
风险等级:5.67Is Samacsys:N
特性阻抗:50 Ω构造:COMPONENT
增益:11.5 dB最大输入功率 (CW):10 dBm
安装特点:SURFACE MOUNT功能数量:1
端子数量:10最大工作频率:1785 MHz
最小工作频率:1710 MHz最高工作温度:90 °C
最低工作温度:-30 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:SOLCC10,.11,24电源:3.4 V
射频/微波设备类型:NARROW BAND LOW POWER子类别:RF/Microwave Amplifiers
最大压摆率:13 mA表面贴装:YES
最大电压驻波比:2Base Number Matches:1

AWU6604RM45P9 数据手册

 浏览型号AWU6604RM45P9的Datasheet PDF文件第2页浏览型号AWU6604RM45P9的Datasheet PDF文件第3页浏览型号AWU6604RM45P9的Datasheet PDF文件第4页浏览型号AWU6604RM45P9的Datasheet PDF文件第5页浏览型号AWU6604RM45P9的Datasheet PDF文件第6页浏览型号AWU6604RM45P9的Datasheet PDF文件第7页 
AWU6604  
HELP3TM Band 4 & 9 WCDMA  
3.4 V / 28.25 dBm Linear PA Module  
Data Sheet - Rev 2.0  
FEATURES  
HSPA Compliant  
InGaP HBT Technology  
•ꢀ Low Quiescent Current with only 2 Bias Modes  
•ꢀ Simpler Calibration  
A
W
U6604  
ꢀ HighꢀEfficiency:ꢀ(R99ꢀwaveform)  
39 % @ POUT = +28.25 dBm  
21 % @ POUT = +16 dBm  
ꢀ LowꢀQuiescentꢀCurrent:ꢀ9.0ꢀmA  
ꢀ LowꢀLeakageꢀCurrentꢀinꢀShutdownꢀMode:ꢀ<1ꢀµA  
ꢀ InternalꢀVoltageꢀRegulatorꢀ  
•ꢀ Integrated “daisy chainable” directional couplers  
M45 Package  
10 Pin 3 mm x 3 mm x 1 mm  
Surface Mount Module  
with CPLIN and CPLOUT Ports  
ꢀ Optimizedꢀforꢀaꢀ50ꢀSystem  
ꢀ LowꢀProfileꢀMiniatureꢀSurfaceꢀMountꢀPackage  
ꢀ RoHSꢀCompliantꢀPackage,ꢀ260ꢀoC MSL-3  
APPLICATIONS  
ꢀ WCDMA/HSPAꢀAWS/UMTS1700-BandꢀWirelessꢀ  
HandsetsꢀandꢀDataꢀDevices  
PRODUCT DESCRIPTION  
TheꢀAWU6604ꢀ HELP3TM PA is a 3rd generation  
WCDMA product for UMTS handsets. This PA  
incorporates ANADIGICS’ HELP3TM technology to  
provideꢀ lowꢀ powerꢀ consumptionꢀ withoutꢀ theꢀ needꢀ  
forꢀanꢀexternalꢀvoltageꢀregulator.ꢀAꢀ“daisyꢀchainable”ꢀ  
directional coupler is integrated in the module thus  
eliminating the need of external couplers. The  
deviceꢀisꢀmanufacturedꢀonꢀanꢀadvancedꢀInGaPꢀHBTꢀ  
MMICtechnologyofferingstate-of-the-artreliability,ꢀ  
temperatureꢀstability,ꢀandꢀruggedness.ꢀThereꢀareꢀtwoꢀ  
selectableꢀ biasꢀ modesꢀ thatꢀ optimizeꢀ efficiencyꢀ forꢀ  
differentꢀoutputꢀpowerꢀlevels,ꢀandꢀaꢀshutdownꢀmodeꢀ  
withꢀlowꢀleakageꢀcurrent,ꢀwhichꢀincreasesꢀhandsetꢀtalkꢀ  
and standby time. The self-contained 3 mm x 3 mm x  
1 mm surface mount package incorporates matching  
networksꢀoptimizedꢀforꢀoutputꢀpower,ꢀefficiency,ꢀandꢀ  
linearityꢀinꢀaꢀ50ꢀsystem.  
GNDꢀatꢀSlugꢀ(pad)  
1
10  
9
V
BATT  
VCC  
2
3
4
5
CPL  
RFIN  
RFOUT  
CPLIN  
GND  
Bias Control  
VoltageꢀRegulation  
8
V
MODE2 ꢀ(N/C)  
7
V
MODE1  
6
V
EN  
CPLOUT  
Figure 1: Block Diagram  
10/2009  

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