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AWT6631Q7 PDF预览

AWT6631Q7

更新时间: 2024-11-24 12:51:23
品牌 Logo 应用领域
ANADIGICS 电信集成电路光电二极管LTE
页数 文件大小 规格书
19页 765K
描述
HELP3DC UMTS2100 (Band 1) LTE/WCDMA/CDMA/TD-SCDMA Linear PAM

AWT6631Q7 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOIC包装说明:HTSON,
针数:10Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.67
Is Samacsys:NJESD-30 代码:S-PDSO-N10
长度:3 mm湿度敏感等级:3
功能数量:1端子数量:10
封装主体材料:PLASTIC/EPOXY封装代码:HTSON
封装形状:SQUARE封装形式:SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.13 mm标称供电电压:3.4 V
表面贴装:YES电信集成电路类型:RF AND BASEBAND CIRCUIT
端子形式:NO LEAD端子节距:0.6 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3 mmBase Number Matches:1

AWT6631Q7 数据手册

 浏览型号AWT6631Q7的Datasheet PDF文件第2页浏览型号AWT6631Q7的Datasheet PDF文件第3页浏览型号AWT6631Q7的Datasheet PDF文件第4页浏览型号AWT6631Q7的Datasheet PDF文件第5页浏览型号AWT6631Q7的Datasheet PDF文件第6页浏览型号AWT6631Q7的Datasheet PDF文件第7页 
AWT6631  
HELP3DCTM UMTS2100 (Band 1)  
LTE/WCDMA/CDMA/TD-SCDMA Linear PAM  
Data Sheet - Rev 2.7  
FEATURES  
•ꢀ CDMA/EVDO, WCDMA/HSPA, LTE and  
TD-SCDMA Compliant  
•ꢀ 3rd Generation HELPTM technology  
•ꢀ High Efficiency (R99 waveform):  
•ꢀꢀ41 % @ POUT = +28.25 dBm  
A
W
T6631  
•ꢀꢀ24 % @ POUT = +17 dBm  
•ꢀ Simpler Calibration with only 2 Bias Modes  
•ꢀꢀꢀꢀOptimized for SMPS Supply  
•ꢀꢀꢀꢀLow Quiescent Current: 8 mA  
Low Leakage Current in Shutdown Mode: <4 µA  
Internal Voltage Regulator  
10 Pin 3 mm x 3 mm x 1 mm  
Surface Mount Module  
•ꢀ Integrated “daisy chainable” directional couplers  
with CPLIN and CPLOUT Ports  
Optimized for a 50 System  
Low Profile Miniature Surface Mount Package  
Internal DC blocks on IN/OUT RF ports  
1.8 V Control Logic  
that optimize efficiency for different output power  
levels, and a shutdown mode with low leakage current,  
which increases handset talk and standby time. The  
self-contained 3 mm x 3 mm x 1 mm surface mount  
package incorporates matching networks optimized for  
output power, efficiency, and linearity in a 50 system.  
RoHS Compliant Package, 260 oC MSL-3  
APPLICATIONS  
Wireless Handsets and Data Devices for:  
•ꢀꢀWCDMA/HSPA/LTE IMT-Band  
•ꢀꢀCDMA/EVDO Bandclass 6  
•ꢀꢀTD-SCDMA 1.82/2.0 GHz Band  
•ꢀꢀTD - LTE Band 33, 34, and 39  
GND at Slug (pad)  
1
2
3
4
5
10  
9
V
BATT  
VCC  
PRODUCT DESCRIPTION  
The AWT6631 PA is designed to provide highly linear  
output for WCDMA, CDMA , LTE and TD-SCDMA  
handsets and data devices with high efficiency at  
both high and low power modes. This HELP3DCTM  
PA can be used with an external switch mode power  
supply (SMPS) to improve its efficiency and reduce  
current consumption further at medium and low output  
powers. A “daisy chainable” directional coupler is  
integrated in the module thus eliminating the need  
of external couplers. The device is manufactured on  
an advanced InGaP HBT MMIC technology offering  
state-of-the-art reliability, temperature stability, and  
ruggedness. There are two selectable bias modes  
CPL  
RFIN  
RFOUT  
CPLIN  
GND  
Bias Control  
8
V
MODE2 (N/C)  
Voltage Regulation  
7
VMODE1  
6
VEN  
CPLOUT  
Figure 1: Block Diagram  
03/2012  

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