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AWT6314RM23Q7 PDF预览

AWT6314RM23Q7

更新时间: 2024-11-20 06:38:47
品牌 Logo 应用领域
ANADIGICS 放大器射频微波功率放大器过程控制系统PCS
页数 文件大小 规格书
8页 372K
描述
Dual-band CDMA/PCS 3.4 V/28 dBm Linear Power Amplifier Module

AWT6314RM23Q7 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:TransferredReach Compliance Code:unknown
风险等级:5.68Is Samacsys:N
其他特性:IT CAN ALSO OPERATE AT 1850 TO 1950 MHZ特性阻抗:50 Ω
构造:COMPONENT增益:24 dB
最大输入功率 (CW):10 dBmJESD-609代码:e3
最大工作频率:849 MHz最小工作频率:824 MHz
最高工作温度:85 °C最低工作温度:-30 °C
射频/微波设备类型:NARROW BAND MEDIUM POWER端子面层:Matte Tin (Sn)
最大电压驻波比:2Base Number Matches:1

AWT6314RM23Q7 数据手册

 浏览型号AWT6314RM23Q7的Datasheet PDF文件第2页浏览型号AWT6314RM23Q7的Datasheet PDF文件第3页浏览型号AWT6314RM23Q7的Datasheet PDF文件第4页浏览型号AWT6314RM23Q7的Datasheet PDF文件第5页浏览型号AWT6314RM23Q7的Datasheet PDF文件第6页浏览型号AWT6314RM23Q7的Datasheet PDF文件第7页 
AWT6314R  
Dual-band CDMA/PCS 3.4 V/28 dBm  
Linear Power Amplifier Module  
Data Sheet - Rev 2.0  
FEATURES  
Single Mode Operation: POUT +28 dBm  
High Efficiency: 39 %  
25 % Package Size Reduction  
Common VMODE Control Line  
A
W
Simplified VCC Bus PCB routing  
Reduced External Component Count  
Low Profile Surface Mount Package: 1.1 mm  
RoHS Compliant Package, 250 oC MSL-3  
T6314  
APPLICATIONS  
CDMA/EVDO Cell & PCS dual-band Wireless  
Handouts and Data Devices  
M23 Package  
12 Pin 3 mm x 5 mm x 1 mm  
Surface Mount Module  
PRODUCT DESCRIPTION  
reliability, temperature stability, and ruggedness.  
Selectable bias modes that optimize efficiency for  
different output power levels, and a shutdown mode  
with low leakage current, serve to increase handset  
talk and standby time. The self contained 3 mm x 5 mm  
x 1 mm surface mount package incorporates matching  
networks optimized for output power, efficiency and  
linearity in a 50 system.  
The AWT6314R meets the increasing demands for  
higher levels of integration in dual-band CDMA/PCS  
1X handsets, while reducing board area requirements  
by 25 %. The package pinout was chosen to enable  
handset manufacturers to easily route VCC to both  
power amplifiers and simplify control with a common  
VMODE pin.Thedeviceismanufacturedonanadvanced  
InGaP HBT MMIC technology offering state-of-the-art  
GND at slug (pad)  
V
REF_PCS  
1
12  
11  
10  
9
RFOUT_PCS  
Bias Control  
RFIN_PCS  
2
3
4
5
GND  
V
CC1  
V
CC2  
CC2  
V
MODE  
V
A
RFIN_CELL  
8
7
RFOUT_CELL  
Bias Control  
GND  
V
REF_CELL  
GND  
6
Figure 1: Block Diagram  
09/2008  

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