Datasheet > AWT6314RM23P9

AWT6314RM23P9

更新时间： 2024-11-20 06:38:47

品牌	Logo	应用领域
ANADIGICS		放大器功率放大器过程控制系统 PCS
页数	文件大小	规格书
8页	372K
描述
Dual-band CDMA/PCS 3.4 V/28 dBm Linear Power Amplifier Module

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AWT6314RM23P9 数据手册

AWT6314R

Dual-band CDMA/PCS 3.4 V/28 dBm

Linear Power Ampliﬁer Module

Data Sheet - Rev 2.0

FEATURES

•

Single Mode Operation: POUT  +28 dBm

High Efﬁciency: 39 %

25 % Package Size Reduction

Common V^MODEControl Line

Simpliﬁed V^CCBus PCB routing

Reduced External Component Count

Low Proﬁle Surface Mount Package: 1.1 mm

RoHS Compliant Package, 250 ^oC MSL-3

T6314

APPLICATIONS

•

CDMA/EVDO Cell & PCS dual-band Wireless

Handouts and Data Devices

M23 Package

12 Pin 3 mm x 5 mm x 1 mm

Surface Mount Module

PRODUCT DESCRIPTION

reliability, temperature stability, and ruggedness.

Selectable bias modes that optimize efﬁciency for

different output power levels, and a shutdown mode

with low leakage current, serve to increase handset

talk and standby time. The self contained 3 mm x 5 mm

x 1 mm surface mount package incorporates matching

networks optimized for output power, efﬁciency and

linearity in a 50 Ω system.

The AWT6314R meets the increasing demands for

higher levels of integration in dual-band CDMA/PCS

1X handsets, while reducing board area requirements

by 25 %. The package pinout was chosen to enable

handset manufacturers to easily route V^CCto both

power ampliﬁers and simplify control with a common

V^MODEpin.Thedeviceismanufacturedonanadvanced

InGaP HBT MMIC technology offering state-of-the-art

GND at slug (pad)

REF_PCS

RFOUT_PCS

Bias Control

RFIN_PCS

GND

CC1

CC2

MODE

RFIN_CELL

RFOUT_CELL

Bias Control

GND

REF_CELL

GND

Figure 1: Block Diagram

09/2008

12 3 4 5 6 7 8

中文翻译

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