Datasheet > AWT6314R

AWT6314R

更新时间： 2024-11-20 03:19:59

品牌	Logo	应用领域
ANADIGICS		放大器功率放大器过程控制系统 PCS
页数	文件大小	规格书
12页	167K
描述
Dual-band CDMA/PCS 3.4 V/28 dBm Linear Power Amplifier Module

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中文翻译

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数据手册

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AWT6314R 数据手册

AWT6314R

Dual-band CDMA/PCS

3.4 V/28 dBm Linear PowerAmplifier Module

PRELIMINARY DATASHEET - Rev 1.2

FEATURES

•

Single Mode Operation: POUT ≤ +28 dBm

High Efficiency: 54 % AMPS, 39 % CDMA

Low Quiescent Current: 50 mA

25 % Package Size Reduction

Common V^MODEControl Line

T6314

Simplified V^CCBus PCB routing

Reduced External Component Count

Low Profile Surface Mount Package: 1.1 mm

RoHS Compliant Package, 250 C MSL-3

APPLICATIONS

•

Dual-band Cellular/PCS CDMA Wireless

Handsets

M23 Package

12 Pin 3 mm x 5 mm x 1 mm

Surface Mount Module

PRODUCT DESCRIPTION

technology offering state-of-the-art reliability,

temperature stability, and ruggedness. Selectable

bias modes that optimize efficiency for different

output power levels, and a shutdown mode with low

leakage current, serve to increase handset talk and

standby time. The self contained 3 mm x 5 mm x 1

mm surface mount package incorporates matching

networks optimized for output power, efficiency and

linearity in a 50 Ω system.

The AWT6314R meets the increasing demands for

higher levels of integration in dual-band CDMA/PCS

1X handsets, while reducing board area

requirements by 25 %. The package pinout was

chosen to enable handset manufacturers to easily

route V^CCto both power amplifiers and simplify

control with a common VMODE pin. The device is

manufactured on an advanced InGaP HBT MMIC

GND at slug (pad)

REF_PCS

RFOUT_PCS

Bias Control

RFIN_PCS

GND

VCC1

CC2

MODE

RFIN_CELL

RFOUT_CELL

Bias Control

GND

REF_CELL

GND

Figure 1: Block Diagram

05/2006

12 3 4 5 6 7...12

中文翻译

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