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AWT6310RM23P9 PDF预览

AWT6310RM23P9

更新时间: 2024-10-04 06:38:47
品牌 Logo 应用领域
ANADIGICS 放大器射频微波功率放大器过程控制系统PCS
页数 文件大小 规格书
8页 364K
描述
Dual-band CDMA/PCS 3.4 V/28 dBm Linear Power Amplifier Module

AWT6310RM23P9 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.69
Is Samacsys:N其他特性:IT CAN ALSO OPERATE AT 1850 TO 1910 MHZ
特性阻抗:50 Ω构造:COMPONENT
增益:24 dB最大输入功率 (CW):10 dBm
最大工作频率:849 MHz最小工作频率:824 MHz
最高工作温度:85 °C最低工作温度:-30 °C
射频/微波设备类型:NARROW BAND MEDIUM POWER最大电压驻波比:2
Base Number Matches:1

AWT6310RM23P9 数据手册

 浏览型号AWT6310RM23P9的Datasheet PDF文件第2页浏览型号AWT6310RM23P9的Datasheet PDF文件第3页浏览型号AWT6310RM23P9的Datasheet PDF文件第4页浏览型号AWT6310RM23P9的Datasheet PDF文件第5页浏览型号AWT6310RM23P9的Datasheet PDF文件第6页浏览型号AWT6310RM23P9的Datasheet PDF文件第7页 
AWT6310R  
Dual-band CDMA/PCS 3.4 V/28 dBm  
Linear Power Amplifier Module  
Data Sheet - Rev 2.0  
FEATURES  
Single Mode Operation: POUT +28 dBm  
High Efficiency: 39 %  
25 % Package Size Reduction  
Common VMODE Control Line  
A
W
T6310R  
Simplified VCC Bus PCB routing  
Reduced External Component Count  
Low Profile Surface Mount Package: 1.1 mm  
RoHS Compliant Package, 250 oC MSL-3  
APPLICATIONS  
CDMA/EVDO Cell & PCS dual-band Wireless  
Handsets and Data Devices  
M23 Package  
12 Pin 3 mm x 5 mm x 1 mm  
Surface Mount Module  
PRODUCT DESCRIPTION  
reliability, temperature stability, and ruggedness.  
Selectable bias modes that optimize efficiency for  
different output power levels, and a shutdown mode  
with low leakage current, serve to increase handset  
talk and standby time. The self contained 3 mm x 5 mm  
x 1 mm surface mount package incorporates matching  
networks optimized for output power, efficiency and  
linearity in a 50 system.  
The AWT6310R meets the increasing demands for  
higher levels of integration in dual-band CDMA/PCS  
1X handsets, while reducing board area requirements  
by 25 %. The package pinout was chosen to enable  
handset manufacturers to easily route VCC to both  
power amplifiers and simplify control with a common  
VMODE pin.Thedeviceismanufacturedonanadvanced  
InGaP HBT MMIC technology offering state-of-the-art  
GND at slug (pad)  
V
REF_CELL  
1
12  
11  
10  
9
GND  
Bias Control  
RFIN_CELL  
2
3
4
5
RFOUT_CELL  
V
MODE  
V
CC2  
CC2  
A
V
CC1  
V
RFIN_PCS  
8
7
GND  
Bias Control  
GND  
V
REF_PCS  
RFOUT_PCS  
6
Figure 1: Block Diagram  
09/2008  

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