Datasheet > AWT6308R_08

AWT6308R_08

更新时间： 2024-10-04 06:38:47

品牌	Logo	应用领域
ANADIGICS		放大器功率放大器过程控制系统 PCS
页数	文件大小	规格书
8页	388K
描述
HELP2TM PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module

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中文翻译

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AWT6308R_08 数据手册

AWT6308R

HELP2^TMPCS/CDMA 3.4V/28dBm

Linear Power Ampliﬁer Module

Data Sheet - Rev 2.3

FEATURES

•

InGaP HBT Technology

•

High Efﬁciency:

40 % @ +28 dBm output

19 % @ +16 dBm output

•

Low Quiescent Current: 15 mA

Low Leakage Current in Shutdown Mode: <1 µA

Internal Voltage Regulation

T6308R

Optimized for a 50 Ω System

Low Proﬁle Miniature Surface Mount Package:

1 mm

•

CDMA 1XRTT, 1xEV-DO Compliant

Pinout Enables Easy Phone Board Migration

From 4 mm x 4 mm Package

M9 Package

8 Pin 3 mm x 3 mm x 1 mm

Surface Mount Module

•

RoHS-Compliant Package, 250 ^oC MSL-3

APPLICATIONS

•

CDMA/EVDO PCS-band Wireless Handsets and

Data Devices

PRODUCT DESCRIPTION

The AWT6308R meets the increasing demands

for higher efﬁciency and smaller footprint in CDMA

1X handsets. The package pinout was chosen to

enable handset manufacturers to switch from a

4 mm x 4 mm PA module with few layout changes

while reducing board area requirements by 44%.

The AWT6308R uses ANADIGICS’ exclusive InGaP-

Plus™ technology, which combines HBT and pHEMT

devices on the same die, to enable state-of-the-art

reliability, temperature stability, and ruggedness. The

AWT6308R is part of ANADIGICS’ High-Efﬁciency-

at-Low-Power (HELP™) family of CDMA power

ampliﬁers, which deliver low quiescent currents and

signiﬁcantly greater efﬁciency without a costly external

DAC or DC-DC converter. Through selectable bias

modes, the AWT6308R achieves optimal efﬁciency

across different output power levels, specifically

at low- and mid-range power levels where the PA

typically operates, thereby dramatically increasing

handset talk-time and standby-time. Its built-in

voltage regulator eliminates the need for external

voltage regulation components. The 3 mm x 3 mm x

1 mm surface mount package incorporates matching

networks optimized for output power, efﬁciency, and

linearity in a 50 Ω system.

GND at slug (pad)

BATT

RFIN

RF^OUT

GND

MODE

Bias Control

Figure 1: Block Diagram

10/2008

12 3 4 5 6 7 8

中文翻译

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与AWT6308R_08相关器件

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AWT6310R	ANADIGICS	获取价格	Dual-band CDMA/PCS 3.4 V/28 dBm Linear Power Amplifier Module
AWT6310R_08	ANADIGICS	获取价格	Dual-band CDMA/PCS 3.4 V/28 dBm Linear Power Amplifier Module
AWT6310RM23P9	ANADIGICS	获取价格	Dual-band CDMA/PCS 3.4 V/28 dBm Linear Power Amplifier Module
AWT6310RM23Q7	ANADIGICS	获取价格	Dual-band CDMA/PCS 3.4 V/28 dBm Linear Power Amplifier Module
AWT6314R	ANADIGICS	获取价格	Dual-band CDMA/PCS 3.4 V/28 dBm Linear Power Amplifier Module
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