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AWT6308R PDF预览

AWT6308R

更新时间: 2024-10-04 03:19:59
品牌 Logo 应用领域
ANADIGICS 放大器功率放大器过程控制系统PCS
页数 文件大小 规格书
8页 176K
描述
PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module

AWT6308R 数据手册

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AWT6308R  
PCS/CDMA 3.4V/28dBm  
Linear PowerAmplifier Module  
PRELIMINARY DATASHEET - Rev 1.0  
FEATURES  
InGaP HBT Technology  
High Efficiency:  
19 % @ +16 dBm output  
40 % @ +28 dBm output  
Low Quiescent Current: 16 mA  
Low Leakage Current in Shutdown Mode: <1 µA  
Internal Voltage Regulation  
A
W
T6308R  
6
8
3
0
R
Optimized for a 50 System  
Low Profile Miniature Surface Mount Package:  
1 mm  
CDMA1XRTT, 1xEV-DO Compliant  
Pinout Enables Easy Phone Board Migration  
From 4 mm x 4 mm Package  
M9 Package  
8 Pin 3 mm x 3 mm x 1 mm  
Surface Mount Module  
o
RoHS-Compliant Package, 250 C MSL-3  
APPLICATIONS  
CDMA Wireless Handsets and Data Devices  
PRODUCT DESCRIPTION  
The AWT6308R meets the increasing demands for  
higher efficiency and smaller footprint in CDMA 1X  
handsets. The package pinout was chosen to  
enable handset manufacturers to switch from a  
4 mm x 4 mm PA module with few layout changes  
while reducing board area requirements by 44%.  
The AWT6308R uses ANADIGICS’ exclusive InGaP-  
Plus™ technology, which combines HBT and  
pHEMT devices on the same die, to enable state-of-  
the-art reliability, temperature stability, and  
ruggedness. The AWT6308R is part of ANADIGICS’  
High-Efficiency-at-Low-Power (HELP™) family of  
CDMA power amplifiers, which deliver low quiescent  
currents and significantly greater efficiency without  
a costly external DAC or DC-DC converter. Through  
selectable bias modes, the AWT6308R achieves  
optimal efficiency across different output power  
levels, specifically at low- and mid-range power  
levels where the PA typically operates, thereby  
dramatically increasing handset talk-time and  
standby-time. Its built-in voltage regulator eliminates  
the need for external voltage regulation  
components. The 3 mm x 3 mm x 1 mm surface mount  
package incorporates matching networks optimized  
for output power, efficiency, and linearity in a 50 Ω  
system.  
GND at slug (pad)  
1
2
3
4
8
7
V
CC  
V
BATT  
RFIN  
RFOUT  
GND  
GND  
V
MODE  
6
5
Bias Control  
V
EN  
Figure 1: Block Diagram  
03/2006  

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