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AWT6302RM9Q7 PDF预览

AWT6302RM9Q7

更新时间: 2024-10-04 06:38:47
品牌 Logo 应用领域
ANADIGICS 放大器射频微波功率放大器过程控制系统PCS
页数 文件大小 规格书
10页 425K
描述
PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module

AWT6302RM9Q7 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.65
特性阻抗:50 Ω构造:COMPONENT
增益:22 dB最大输入功率 (CW):10 dBm
最大工作频率:1910 MHz最小工作频率:1850 MHz
最高工作温度:85 °C最低工作温度:-30 °C
射频/微波设备类型:NARROW BAND MEDIUM POWER最大电压驻波比:2.5
Base Number Matches:1

AWT6302RM9Q7 数据手册

 浏览型号AWT6302RM9Q7的Datasheet PDF文件第2页浏览型号AWT6302RM9Q7的Datasheet PDF文件第3页浏览型号AWT6302RM9Q7的Datasheet PDF文件第4页浏览型号AWT6302RM9Q7的Datasheet PDF文件第5页浏览型号AWT6302RM9Q7的Datasheet PDF文件第6页浏览型号AWT6302RM9Q7的Datasheet PDF文件第7页 
AWT6302R  
PCS/CDMA 3.4V/28dBm  
Linear Power Amplifier Module  
Data Sheet - Rev 2.1  
FEATURES  
InGaP HBT Technology  
High Efficiency:  
39%, VMODE = 0 V  
40%, VMODE = +2.85 V (no mode switching)  
Low Quiescent Current: 50 mA  
Low Leakage Current in Shutdown Mode: <1 µA  
V
REF = +2.85 V (+2.75 V min over temp)  
Optimized for a 50 System  
Low Profile Miniature Surface Mount Package:  
1.1 mm  
CDMA 1XRTT, 1xEV-DO Compliant  
Pinout Enables Easy Phone Board Migration  
From 4 mm x 4 mm Package  
M9 Package  
8 Pin 3 mm x 3 mm x 1.1 mm  
Surface Mount Module  
RoHS-Compliant Package, 250 oC MSL-3  
APPLICATIONS  
CDMA/EVDO PCS-band Wireless Handsets and  
Data Devices  
PRODUCT DESCRIPTION  
ruggedness. Selectable bias modes that optimize  
efficiency for different output power levels, and a  
shutdown mode with low leakage current, increase  
handset talk and standby time. The self-contained  
3 mm x 3 mm x 1.1 mm surface mount package  
incorporates matching networks optimized for output  
power, efficiency, and linearity in a 50 system.  
The AWT6302R meets the increasing demands for  
higher efficiency and linearity in CDMA 1X handsets,  
while reducing pcb area by 44%. The package pinout  
was chosen to enable handset manufacturers to  
switch from a 4 mm x 4 mm PA module with very few  
layout changes to the phone board. The PA module is  
optimizedforVREF =+2.85V.Thedeviceismanufactured  
on an advanced InGaP HBT MMIC technology offering  
state-of-the-art reliability, temperature stability, and  
GND at slug (pad)  
1
8
7
V
CC  
V
CC  
2
3
4
RFIN  
RFOUT  
GND  
GND  
V
MODE  
6
Bias Control  
5
V
REF  
Figure 1: Block Diagram  
09/2008  

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