Datasheet > AWT6302R

AWT6302R

更新时间： 2024-11-20 06:38:47

品牌	Logo	应用领域
ANADIGICS		放大器功率放大器过程控制系统 PCS
页数	文件大小	规格书
10页	425K
描述
PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module

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AWT6302R 数据手册

AWT6302R

PCS/CDMA 3.4V/28dBm

Linear Power Ampliﬁer Module

Data Sheet - Rev 2.1

FEATURES

•

InGaP HBT Technology

•

High Efﬁciency:

39%, V^MODE= 0 V

40%, VMODE = +2.85 V (no mode switching)

•

Low Quiescent Current: 50 mA

Low Leakage Current in Shutdown Mode: <1 µA

REF = +2.85 V (+2.75 V min over temp)

Optimized for a 50 Ω System

Low Proﬁle Miniature Surface Mount Package:

1.1 mm

•

CDMA 1XRTT, 1xEV-DO Compliant

Pinout Enables Easy Phone Board Migration

From 4 mm x 4 mm Package

M9 Package

8 Pin 3 mm x 3 mm x 1.1 mm

Surface Mount Module

•

RoHS-Compliant Package, 250 ^oC MSL-3

APPLICATIONS

•

CDMA/EVDO PCS-band Wireless Handsets and

Data Devices

PRODUCT DESCRIPTION

ruggedness. Selectable bias modes that optimize

efﬁciency for different output power levels, and a

shutdown mode with low leakage current, increase

handset talk and standby time. The self-contained

3 mm x 3 mm x 1.1 mm surface mount package

incorporates matching networks optimized for output

power, efﬁciency, and linearity in a 50 Ω system.

The AWT6302R meets the increasing demands for

higher efﬁciency and linearity in CDMA 1X handsets,

while reducing pcb area by 44%. The package pinout

was chosen to enable handset manufacturers to

switch from a 4 mm x 4 mm PA module with very few

layout changes to the phone board. The PA module is

optimizedforV^REF=+2.85V.Thedeviceismanufactured

on an advanced InGaP HBT MMIC technology offering

state-of-the-art reliability, temperature stability, and

GND at slug (pad)

RFIN

RF^OUT

GND

MODE

Bias Control

REF

Figure 1: Block Diagram

09/2008

12 3 4 5 6 7...10

中文翻译

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