Datasheet > AWT6302

AWT6302

更新时间： 2024-10-03 23:14:15

品牌	Logo	应用领域
ANADIGICS		放大器功率放大器过程控制系统 PCS
页数	文件大小	规格书
8页	178K
描述
PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module

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中文翻译

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技术参数
数据手册

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AWT6302 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.82	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	25 dB
最大输入功率 (CW)：	10 dBm	最大工作频率：	1910 MHz
最小工作频率：	1850 MHz	最高工作温度：	85 °C
最低工作温度：	-30 °C	射频/微波设备类型：	NARROW BAND LOW POWER
最大电压驻波比：	8

AWT6302 数据手册

AWT6302

PCS/CDMA 3.4V/28dBm

Linear Power Amplifier Module

ADVANCED PRODUCT INFORMATION - Rev 0.1

FEATURES

•

InGaP HBT Technology

High Efficiency: 40%

Low Quiescent Current: 50 mA

Low Leakage Current in Shutdown Mode: <1 µA

VREF = +2.8 V (+2.7 V min over temp)

Optimized for a 50 Ω System

Low Profile Miniature Surface Mount Package:

1.1mm

•

CDMA 1XRTT, 1xEV-DO Compliant

Pinout Enables Easy Phone Board Migration

From 4mm x 4mm Package

M9 Package

8 Pin 3mm x 3mm

Surface Mount Module

APPLICATIONS

•

PCS CDMA Wireless Handsets

•

Dual Band CDMA Wireless Handsets

PRODUCT DESCRIPTION

The AWT6302 meets the increasing demands for

higher efficiency and linearity in CDMA 1X handsets,

while reducing pcb area by 44%. The package

pinout was chosen to enable handset

manufacturers to switch from a 4mm x 4mm PA

module with very few layout changes to the phone

board. The PA module is optimized for V^REF= +2.8 V, a

requirement for compatibility with the Qualcomm®

6000 chipset. The device is manufactured on an

advanced InGaP HBT MMIC technology offering

state-of-the-art reliability, temperature stability, and

ruggedness. Selectable bias modes that optimize

efficiency for different output power levels, and a

shutdown mode with low leakage current, increase

handset talk and standby time. The self-contained

3mm x 3mm surface mount package incorporates

matching networks optimized for output power,

efficiency, and linearity in a 50 Ω system.

GND at slug (pad)

RFIN

RF^OUT

GND

MODE

Bias Control

REF

Figure 1: Block Diagram

04/2003

12 3 4 5 6 7 8

中文翻译

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