Datasheet > AWT6301RM9Q7

AWT6301RM9Q7

更新时间： 2024-10-04 06:38:47

品牌	Logo	应用领域
ANADIGICS		放大器功率放大器蜂窝
页数	文件大小	规格书
9页	364K
描述
Cellular CDMA 3.4 V/28 dBm Linear Power Amplifier Module

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AWT6301RM9Q7 数据手册

AWT6301R

Cellular CDMA 3.4 V/28 dBm

Linear Power Ampliﬁer Module

Data Sheet - Rev 2.0

FEATURES

•

InGaP HBT Technology

•

High Efﬁciency:

40%, V^MODE= 0 V

41%, V^MODE= +2.85 V (no mode switching)

Low Quiescent Current: 50 mA

Low Leakage Current in Shutdown Mode: <1 µA

•

REF = +2.85 V (+2.75 V Min Over Temp.)

Optimized for a 50 Ω System

Low Proﬁle Surface Mount Package: 1.1mm

CDMA 1XRTT, 1xEV-DO Compliant

Pinout Enables Easy Phone Board Migration

From 4 mm x 4 mm Package

•

RoHS Compliant Package, 250 ^oC MSL-3

M9 Package

8 Pin 3 x 3 x 1 mm

Surface Mount Module

APPLICATIONS

•

CDMA/EVDO Cell-band Wireless Handsets and

Data Devices

PRODUCT DESCRIPTION

The AWT6301R meets the increasing demands for

higher efﬁciency and linearity in CDMA1X handsets.

The package pinout was chosen to enable handset

manufacturers to switch from a 4mm x 4mm PA

module with very few layout changes to the phone

board. The device is manufactured on an advanced

InGaP HBT MMIC technology offering state-of-the-

art reliability, temperature stability, and ruggedness.

Selectable bias modes that optimize efficiency

for different output power levels, and a shutdown

mode with low leakage current, serve to increase

handset talk and standby time. The self contained

3 mm x 3 mm x 1 mm surface mount package

incorporates matching networks optimized for output

power, efﬁciency and linearity in a 50 Ω system.

GND at slug (pad)

VREF

GND

Bias Control

RFOUT

VMODE

RFIN

GND

VCC1

VCC2

Figure 1: Block Diagram

10/2008

12 3 4 5 6 7...9

中文翻译

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