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AWT6276RM20P8 PDF预览

AWT6276RM20P8

更新时间: 2024-10-04 03:19:59
品牌 Logo 应用领域
ANADIGICS 放大器射频微波功率放大器过程控制系统PCS
页数 文件大小 规格书
8页 215K
描述
HELP PCS/WCDMA 3.4 V/29.5 dBm Linear Power Amplifier Module

AWT6276RM20P8 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:SOLCC10,.16,32
Reach Compliance Code:unknown风险等级:5.68
特性阻抗:50 Ω构造:COMPONENT
增益:13 dB最大输入功率 (CW):10 dBm
JESD-609代码:e3安装特点:SURFACE MOUNT
功能数量:1端子数量:10
最大工作频率:1910 MHz最小工作频率:1850 MHz
最高工作温度:110 °C最低工作温度:-20 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:SOLCC10,.16,32
电源:3.4 V射频/微波设备类型:NARROW BAND MEDIUM POWER
子类别:RF/Microwave Amplifiers最大压摆率:22 mA
表面贴装:YES端子面层:Matte Tin (Sn)
最大电压驻波比:2Base Number Matches:1

AWT6276RM20P8 数据手册

 浏览型号AWT6276RM20P8的Datasheet PDF文件第2页浏览型号AWT6276RM20P8的Datasheet PDF文件第3页浏览型号AWT6276RM20P8的Datasheet PDF文件第4页浏览型号AWT6276RM20P8的Datasheet PDF文件第5页浏览型号AWT6276RM20P8的Datasheet PDF文件第6页浏览型号AWT6276RM20P8的Datasheet PDF文件第7页 
AWT6276R  
HELPTM PCS/WCDMA 3.4 V/29.5 dBm  
Linear PowerAmplifier Module  
PRELIMINARY DATASHEET - Rev 1.4  
FEATURES  
InGaP HBT Technology  
High Efficiency:  
45 % @ POUT = +29.5 dBm  
21 % @ POUT = +16 dBm  
16 % @ POUT = +7 dBm  
A
WT6276R  
Low Quiescent Current: 15 mA  
Low Leakage Current in Shutdown Mode: <1 µA  
V
REF = +2.85 V (+2.75 V min over temp)  
Optimized for a 50 System  
Low Profile Miniature Surface Mount Package:  
1.1 mm Max  
M20 Package  
10 Pin 4 mm x 4 mm x 1.1 mm  
Surface Mount Module  
o
RoHS Compliant Package, 250 C MSL-3  
HSDPA Compliant (no backoff)  
APPLICATIONS  
Dual Band WCDMA Wireless Handsets  
Dual Mode 3GPP Wireless Handsets  
PRODUCT DESCRIPTION  
The AWT6276 meets the increasing demands for  
higher output power in UMTS handsets. The PAmodule  
is optimized for VREF = +2.85 V, a requirement for  
compatibility with the Qualcomm® 6275 chipset. The  
device is manufactured on an advanced InGaP HBT  
MMIC technology offering state-of-the-art reliability,  
temperature stability, and ruggedness. Selectable  
bias modes that optimize efficiency for different output  
power levels, and a shutdown mode with low leakage  
current, increase handset talk and standby time. The  
self-contained 4 mm x 4 mm x 1.1 mm surface mount  
package incorporates matching networks optimized  
for output power, efficiency, and linearity in a 50 Ω  
system.  
GND at slug (pad)  
1
2
3
4
5
10  
9
V
CC  
V
CC  
RFIN  
GND  
RFOUT  
GND  
GND  
8
GND  
Bias Control  
7
V
MODE  
6
V
REF  
Figure 1: Block Diagram  
12/2005  

AWT6276RM20P8 替代型号

型号 品牌 替代类型 描述 数据表
RMPA2259 FAIRCHILD

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