Datasheet > AWT6276R

AWT6276R

更新时间： 2024-10-04 03:19:59

品牌	Logo	应用领域
ANADIGICS		放大器功率放大器过程控制系统 PCS
页数	文件大小	规格书
8页	215K
描述
HELP PCS/WCDMA 3.4 V/29.5 dBm Linear Power Amplifier Module

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中文翻译

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AWT6276R 数据手册

AWT6276R

HELP^TMPCS/WCDMA 3.4 V/29.5 dBm

Linear PowerAmplifier Module

PRELIMINARY DATASHEET - Rev 1.4

FEATURES

•

InGaP HBT Technology

High Efficiency:

45 % @ P^OUT= +29.5 dBm

•

21 % @ P^OUT= +16 dBm

16 % @ POUT = +7 dBm

WT6276R

•

Low Quiescent Current: 15 mA

Low Leakage Current in Shutdown Mode: <1 µA

REF = +2.85 V (+2.75 V min over temp)

Optimized for a 50 Ω System

Low Profile Miniature Surface Mount Package:

1.1 mm Max

M20 Package

10 Pin 4 mm x 4 mm x 1.1 mm

Surface Mount Module

•

RoHS Compliant Package, 250 C MSL-3

HSDPA Compliant (no backoff)

APPLICATIONS

•

Dual Band WCDMA Wireless Handsets

•

Dual Mode 3GPP Wireless Handsets

PRODUCT DESCRIPTION

The AWT6276 meets the increasing demands for

higher output power in UMTS handsets. The PAmodule

is optimized for V^REF= +2.85 V, a requirement for

compatibility with the Qualcomm® 6275 chipset. The

device is manufactured on an advanced InGaP HBT

MMIC technology offering state-of-the-art reliability,

temperature stability, and ruggedness. Selectable

bias modes that optimize efficiency for different output

power levels, and a shutdown mode with low leakage

current, increase handset talk and standby time. The

self-contained 4 mm x 4 mm x 1.1 mm surface mount

package incorporates matching networks optimized

for output power, efficiency, and linearity in a 50 Ω

system.

GND at slug (pad)

RFIN

GND

RFOUT

GND

Bias Control

MODE

REF

Figure 1: Block Diagram

12/2005

12 3 4 5 6 7 8

中文翻译

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