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AWT6272RM20P9 PDF预览

AWT6272RM20P9

更新时间: 2024-10-04 06:38:47
品牌 Logo 应用领域
ANADIGICS 放大器射频微波功率放大器蜂窝
页数 文件大小 规格书
8页 423K
描述
HELPTM Cellular/WCDMA 3.4 V/29 dBm Linear Power Amplifier Module

AWT6272RM20P9 技术参数

是否Rohs认证:符合生命周期:Transferred
包装说明:SOLCC10,.16,32Reach Compliance Code:unknown
风险等级:5.67Is Samacsys:N
特性阻抗:50 Ω构造:COMPONENT
增益:13 dB最大输入功率 (CW):10 dBm
安装特点:SURFACE MOUNT功能数量:1
端子数量:10最大工作频率:849 MHz
最小工作频率:824 MHz最高工作温度:110 °C
最低工作温度:-20 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:SOLCC10,.16,32电源:3.4 V
射频/微波设备类型:NARROW BAND MEDIUM POWER子类别:RF/Microwave Amplifiers
表面贴装:YES技术:GAAS
最大电压驻波比:2Base Number Matches:1

AWT6272RM20P9 数据手册

 浏览型号AWT6272RM20P9的Datasheet PDF文件第2页浏览型号AWT6272RM20P9的Datasheet PDF文件第3页浏览型号AWT6272RM20P9的Datasheet PDF文件第4页浏览型号AWT6272RM20P9的Datasheet PDF文件第5页浏览型号AWT6272RM20P9的Datasheet PDF文件第6页浏览型号AWT6272RM20P9的Datasheet PDF文件第7页 
AWT6272  
HELPTM Cellular/WCDMA 3.4 V/29 dBm  
Linear Power Amplifier Module  
Data Sheet - Rev 2.1  
FEATURES  
InGaP HBT Technology  
High Efficiency:  
44 % @ POUT = +29 dBm  
20 % @ POUT = +16 dBm  
A
W
T6272R  
15 % @ POUT = +7 dBm  
Low Quiescent Current: 16 mA  
Low Leakage Current in Shutdown Mode: <1 µA  
V
REF = +2.85 V (+2.75 V min over temp)  
Optimized for a 50 System  
Low Profile Miniature Surface Mount Package  
RoHS Compliant Package, 250 oC MSL-3  
HSPA Compliant (no backoff)  
M20 Package  
10 Pin 4 mm x 4 mm x 1 mm  
Surface Mount Module  
APPLICATIONS  
WCDMA/HSPA Cell-Band Wireless Handsets and  
Data Devices  
MMIC technology offering state-of-the-art reliability,  
temperature stability, and ruggedness. Selectable  
bias modes that optimize efficiency for different output  
power levels, and a shutdown mode with low leakage  
current, increase handset talk and standby-time. The  
self-contained 4 mm x 4 mm x 1 mm surface mount  
package incorporates matching networks optimized for  
output power, efficiency, and linearity in a 50 system.  
PRODUCT DESCRIPTION  
The AWT6272 meets the increasing demands for  
higher output power in UMTS handsets. The PA  
module is optimized for VREF = +2.85 V, a requirement for  
compatibility with the Qualcomm® 6250 chipset. The  
device is manufactured on an advanced InGaP HBT  
GND at slug (pad)  
1
10  
VREF  
GND  
2
3
4
5
Bias Control  
9
8
7
6
V
MODE  
GND  
RFOUT  
GND  
GND  
RFIN  
VCC  
VCC  
Figure 1: Block Diagram  
11/2008  

AWT6272RM20P9 替代型号

型号 品牌 替代类型 描述 数据表
AWT6272RM20P8 ANADIGICS

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