Datasheet > AWT6272R

AWT6272R

更新时间： 2024-10-04 03:19:59

品牌	Logo	应用领域
ANADIGICS		放大器功率放大器蜂窝
页数	文件大小	规格书
8页	215K
描述
HELP Cellular/WCDMA 3.4 V/29 dBm Linear Power Amplifier Module

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中文翻译

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AWT6272R 数据手册

AWT6272R

HELP^TMCellular/WCDMA 3.4 V/29 dBm

Linear PowerAmplifier Module

PRELIMINARY DATASHEET - Rev 1.5

FEATURES

•

InGaP HBT Technology

High Efficiency:

44 % @ P^OUT= +29 dBm

•

20 % @ P^OUT= +16 dBm

15 % @ POUT = +7 dBm

WT6272R

•

Low Quiescent Current: 16 mA

Low Leakage Current in Shutdown Mode: <1 µA

VREF = +2.85 V (+2.75 V min over temp)

Optimized for a 50 Ω System

Low Profile Miniature Surface Mount Package

Option: 1.1 mm Max

M20 Package

10 Pin 4 mm x 4 mm x 1.1 mm

Surface Mount Module

•

RoHS Compliant Package, 250 C MSL-3

HSDPA Compliant (no backoff)

APPLICATIONS

•

Dual Band WCDMA Wireless Handsets

MMIC technology offering state-of-the-art reliability,

temperature stability, and ruggedness. Selectable bias

modes that optimize efficiency for different output power

levels, and a shutdown mode with low leakage current,

increase handset talk and standby time. The self-

contained 4 mm x 4 mm x 1.1 mm surface mount

package incorporates matching networks optimized

for output power, efficiency, and linearity in a 50 Ω

system.

•

Dual Mode 3GPP Wireless Handsets

PRODUCT DESCRIPTION

The AWT6272R meets the increasing demands for

higher output power in UMTS handsets. The PAmodule

is optimized for V^REF= +2.85 V, a requirement for

compatibility with the Qualcomm® 6250 chipset. The

device is manufactured on an advanced InGaP HBT

GND at slug (pad)

REF

GND

RFOUT

GND

Bias Control

VMODE

GND

RFIN

VCC

Figure 1: Block Diagram

05/2006

12 3 4 5 6 7 8

中文翻译

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