Datasheet > AWT6272

AWT6272

更新时间： 2024-10-04 06:38:47

品牌	Logo	应用领域
ANADIGICS		放大器功率放大器蜂窝
页数	文件大小	规格书
8页	423K
描述
HELPTM Cellular/WCDMA 3.4 V/29 dBm Linear Power Amplifier Module

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AWT6272 数据手册

AWT6272

HELP^TMCellular/WCDMA 3.4 V/29 dBm

Linear Power Ampliﬁer Module

Data Sheet - Rev 2.1

FEATURES

•

InGaP HBT Technology

•

High Efﬁciency:

44 % @ P^OUT= +29 dBm

20 % @ P^OUT= +16 dBm

T6272R

15 % @ P^OUT= +7 dBm

•

Low Quiescent Current: 16 mA

Low Leakage Current in Shutdown Mode: <1 µA

REF = +2.85 V (+2.75 V min over temp)

Optimized for a 50 Ω System

Low Proﬁle Miniature Surface Mount Package

RoHS Compliant Package, 250 ^oC MSL-3

HSPA Compliant (no backoff)

M20 Package

10 Pin 4 mm x 4 mm x 1 mm

Surface Mount Module

APPLICATIONS

•

WCDMA/HSPA Cell-Band Wireless Handsets and

Data Devices

MMIC technology offering state-of-the-art reliability,

temperature stability, and ruggedness. Selectable

bias modes that optimize efﬁciency for different output

power levels, and a shutdown mode with low leakage

current, increase handset talk and standby-time. The

self-contained 4 mm x 4 mm x 1 mm surface mount

package incorporates matching networks optimized for

output power, efﬁciency, and linearity in a 50 Ω system.

PRODUCT DESCRIPTION

The AWT6272 meets the increasing demands for

higher output power in UMTS handsets. The PA

module is optimized for V^REF= +2.85 V, a requirement for

compatibility with the Qualcomm® 6250 chipset. The

device is manufactured on an advanced InGaP HBT

GND at slug (pad)

VREF

GND

Bias Control

MODE

GND

RFOUT

GND

RFIN

VCC

Figure 1: Block Diagram

11/2008

12 3 4 5 6 7 8

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