Datasheet > AWT6252M7P8

AWT6252M7P8

更新时间： 2024-11-17 22:05:59

品牌	Logo	应用领域
ANADIGICS		放大器功率放大器
页数	文件大小	规格书
8页	153K
描述
IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module

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中文翻译

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技术参数
数据手册

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AWT6252M7P8 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.66	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	17 dB
最大输入功率 (CW)：	10 dBm	最大工作频率：	1980 MHz
最小工作频率：	1920 MHz	最高工作温度：	90 °C
最低工作温度：	-10 °C	射频/微波设备类型：	NARROW BAND MEDIUM POWER
最大电压驻波比：	2	Base Number Matches：	1

AWT6252M7P8 数据手册

AWT6252

IMT/WCDMA 3.4V/27.5dBm

Linear PowerAmplifier Module

PRELIMINARY DATASHEET - Rev 1.3

FEATURES

•

InGaP HBT Technology

High Efficiency: 39%

Low Quiescent Current: 50 mA

Low Leakage Current in Shutdown Mode: <1 µA

VREF = +2.85 V (+2.75 V min over temp)

WT6252

Optimized for a 50 Ω System

Low Profile Miniature Surface Mount Package:

1.56mm Max

APPLICATIONS

•

Dual Mode 3GPP Wireless Handsets

M7 Package

10 Pin 4 x 4 x 1.5 mm

Surface Mount Module

PRODUCT DESCRIPTION

The AWT6252 meets the increasing demands for

higher output power in 3GPP 1XRTT handsets. The PA

module is optimized for V^REF= +2.85 V, a requirement

for compatibility with the Qualcomm® 6250 chipset.

The device is manufactured on an advanced InGaP

HBT MMIC technology offering state-of-the-art

reliability, temperature stability, and ruggedness.

Selectable bias modes that optimize efficiency for

different output power levels, and a shutdown mode

with low leakage current, increase handset talk and

standby time. The self-contained 4 x 4 x 1.5 mm surface

mount package incorporates matching networks

optimized for output power, efficiency, and linearity in a

50 Ω system.

GND at slug (pad)

RFIN

GND

RFOUT

GND

Bias Control

MODE

REF

Figure 1: Block Diagram

03/2004

12 3 4 5 6 7 8

中文翻译

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