Datasheet > AWT6251M7P8

AWT6251M7P8

更新时间： 2024-10-04 03:19:55

品牌	Logo	应用领域
ANADIGICS		放大器射频微波功率放大器过程控制系统 PCS
页数	文件大小	规格书
12页	295K
描述
PCS/WCDMA 3.4V/27.5 dBm Linear Power Amplifier Module

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AWT6251M7P8 数据手册

AWT6251

PCS/WCDMA 3.4V/27.5 dBm

Linear PowerAmplifier Module

PRELIMINARY DATASHEET - Rev 1.3

FEATURES

•

InGaP HBT Technology

High Efficiency: 38%

Low Quiescent Current: 50 mA

Low Leakage Current in Shutdown Mode: <1 µA

VREF = +2.85 V (+2.75 V min over temp)

WT6251

Optimized for a 50 Ω System

Low Profile Miniature Surface Mount Package:

1.56 mm Max

•

RoHS Compliant Package Option, 250 C MSL-3

APPLICATIONS

•

Dual Mode 3GPP Wireless Handsets

M7 Package

10 Pin 4 mm x 4 mm x 1.5 mm

Surface Mount Module

PRODUCT DESCRIPTION

The AWT6251 meets the increasing demands for

higher output power in 3GPP handsets. The PAmodule

is optimized for V^REF= +2.85 V, a requirement for

compatibility with the Qualcomm® 6250 chipset. The

device is manufactured on an advanced InGaP HBT

MMIC technology offering state-of-the-art reliability,

temperature stability, and ruggedness. Selectable

bias modes that optimize efficiency for different output

power levels, and a shutdown mode with low leakage

current, increase handset talk and standby time. The

self-contained 4 mm x 4 mm x 1.5 mm surface mount

package incorporates matching networks optimized

for output power, efficiency, and linearity in a 50 Ω

system.

GND at slug (pad)

RFIN

GND

RFOUT

GND

Bias Control

MODE

REF

Figure 1: Block Diagram

06/2005

12 3 4 5 6 7...12

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