5秒后页面跳转
AWT6223RM26P9 PDF预览

AWT6223RM26P9

更新时间: 2024-10-04 06:38:47
品牌 Logo 应用领域
ANADIGICS 电信集成电路放大器功率控制功率放大器GSM
页数 文件大小 规格书
16页 563K
描述
WCDMA/GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control

AWT6223RM26P9 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:BCC包装说明:QCCN,
针数:24Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.7
JESD-30 代码:S-XBCC-N24长度:8 mm
湿度敏感等级:3功能数量:1
端子数量:24最高工作温度:85 °C
最低工作温度:-20 °C封装主体材料:UNSPECIFIED
封装代码:QCCN封装形状:SQUARE
封装形式:CHIP CARRIER峰值回流温度(摄氏度):250
认证状态:Not Qualified座面最大高度:1.12 mm
标称供电电压:3.4 V表面贴装:YES
电信集成电路类型:RF AND BASEBAND CIRCUIT温度等级:OTHER
端子形式:NO LEAD端子节距:1.2 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:6 mmBase Number Matches:1

AWT6223RM26P9 数据手册

 浏览型号AWT6223RM26P9的Datasheet PDF文件第2页浏览型号AWT6223RM26P9的Datasheet PDF文件第3页浏览型号AWT6223RM26P9的Datasheet PDF文件第4页浏览型号AWT6223RM26P9的Datasheet PDF文件第5页浏览型号AWT6223RM26P9的Datasheet PDF文件第6页浏览型号AWT6223RM26P9的Datasheet PDF文件第7页 
ꢁWt6223ꢃ  
WCDMꢁ/GsM/GPꢃs/Polar ꢀDGꢀ  
Power Amplifier Module  
with Integrated Power Control  
Daꢄa sheeꢄ - ꢃꢀv 2.0  
Fꢀꢁtꢂꢃꢀs  
•ꢀ InGaP HBT Technology  
•ꢀ Optimized for a 50 System  
•ꢀ Internal Reference Voltage  
•ꢀ Integrated GSM/EDGE Power Control with Tem-  
perature Compensation  
•ꢀ Low Profile Surface Mount Package:  
6 mm x 8 mm x 1 mm  
•ꢀ RoHS Compliant Package, 250 oC MSL-3  
WCDMꢁ MODꢀ  
•ꢀ HSDPA Compliant  
•ꢀ High Efficiency:  
41% @ POUT = +28.5 dBm  
21% @ POUT = +16 dBm  
•ꢀ Low Quiescent Current: 12 mA  
InGaP HBT MMIC technology to provide reliability,  
temperature stability, and ruggedness. This penta-  
band module consists of three amplifier chains; one  
to support GSM/GPRS/EGPRS in cellular bands, one  
to support GSM/GPRS/EGPRS in DCS/PCS bands,  
and one to support WCDMA in the IMT band. In ad-  
dition, the AWT6223R module includes an internal  
reference voltage and integrated power control with  
temperature compensation for use in GMSK and  
8-PSK modes of operation. These features facilitate  
fast and easy production calibration, minimize per-  
formance variation over temperature, and reduce the  
number of external components required.  
Low Leakage Current in Shutdown Mode: <1 A  
Internal Voltage Regulator Eliminates the Need for  
External Reference Voltage  
The WCDMA PA incorporates ANADIGICS’ HELP2TM  
technology. Through selectable bias modes, the  
AWT6223R achieves optimal efficiency across  
different output power levels, specifically at low  
and mid-range power levels where the PA typically  
operates, thereby dramatically increasing handset  
talk-time and standby-time. Its built-in voltage regulator  
eliminates the need for an external reference voltage  
and switch components, reducing PCB area and BOM  
costs. All of the RF ports for this device are internally  
matched to 50 . The RF inputs GSM_IN and DCS/  
PCS_IN both have shunt resistors to ground to main-  
tain a good input VSWR as the VRAMP power control  
voltage is varied. Internal DC blocks are provided at  
the RF outputs.  
•ꢀ VEN = +2.4 V (+2.2 V min over Temp)  
GMsK MODꢀ  
•ꢀ +35 dBm GSM850/900 Output Power  
+33 dBm DCS/PCS Output Power  
•ꢀ 55 % GSM850/900 PAE  
•ꢀ 50 % DCS/PCS PAE  
•ꢀ Power Control Range > 50 dB  
•ꢀ EGPRS Capable (class 12)  
ꢀDGꢀ MODꢀ  
+29 dBm GSM850/900 Output Power  
+28.5 dBm DCS/PCS Output Power  
•ꢀ 27 % GSM850/900 PAE  
•ꢀ 30 % DCS/PCS PAE  
•ꢀ -63 dBc/30 kHz Typical ACPR (400 kHz)  
CEXT2  
•ꢀ -77 dBc/30 kHz Typical ACPR (600 kHz)  
22  
VCC_WCDMA  
1
2
21  
20  
19  
18  
17  
WCDMA_IN  
ꢁPPLICꢁtIONs  
VMODE  
WCDMA_OUT  
GND  
3G Handsets, Smartphones, Data Devices Incor-  
porating:  
Voltage Regulator  
and Bias Control  
VEN  
DCS/PCS_IN  
BS  
3
DCS/PCS_OUT  
4
WCDMA (IMT)  
•ꢀGSM850/GSM900/DCS/PCS Bands  
GMSK and 8-PSK (Open Loop Polar)  
Modulations  
5
GND  
6
GND  
TX_EN  
VBATT  
16  
15  
CMOS Bias/Power  
Controller  
7
CEXT3  
8
CEXT1  
GND  
14  
13  
12  
PꢃODꢂCt DꢀsCꢃIPtION  
9
VRAMP  
GND  
The AWT6223R WEDGE module supports dual, tri,  
or quad band operation using GMSK/GPRS and  
8-PSK (open loop polar) modulations, and WCDMA  
operation in the IMT band. The AWT6223R mod-  
ule is manufactured using ANADIGICS’ advanced  
GSM850/900_IN  
GSM850/900_OUT  
10  
11  
VCC_GSM  
Figure 1: Block Diagram  
11/2008  

与AWT6223RM26P9相关器件

型号 品牌 获取价格 描述 数据表
AWT6224R ANADIGICS

获取价格

HELP3TM Dual-band 900 MHz/IMT UMTS 3.4 V HSPA Linear Power Amplifier Module
AWT6224RM28P9 ANADIGICS

获取价格

HELP3TM Dual-band 900 MHz/IMT UMTS 3.4 V HSPA Linear Power Amplifier Module
AWT6224RM28Q7 ANADIGICS

获取价格

HELP3TM Dual-band 900 MHz/IMT UMTS 3.4 V HSPA Linear Power Amplifier Module
AWT6235 ANADIGICS

获取价格

WiBro 3.4V/25.5dBm Linear Power Amplifier Module
AWT6235RM20P8 ANADIGICS

获取价格

WiBro 3.4V/25.5dBm Linear Power Amplifier Module
AWT6241 ANADIGICS

获取价格

HELP3TM UMTS/TD-SCDMA Linear Power Amplifier Module
AWT6241RM27P9 ANADIGICS

获取价格

HELP3TM UMTS/TD-SCDMA Linear Power Amplifier Module
AWT6241RM27Q7 ANADIGICS

获取价格

HELP3TM UMTS/TD-SCDMA Linear Power Amplifier Module
AWT6243R ANADIGICS

获取价格

HELP3TM 1.7 GHz/UMTS 3.4 V/28.5 dBm Linear Power Amplifier Module
AWT6243RM27P9 ANADIGICS

获取价格

HELP3TM 1.7 GHz/UMTS 3.4 V/28.5 dBm Linear Power Amplifier Module