Datasheet > AWT6172

AWT6172

更新时间： 2024-11-18 06:38:47

品牌	Logo	应用领域
ANADIGICS		放大器功率控制功率放大器 GSM
页数	文件大小	规格书
20页	803K
描述
GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control

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中文翻译

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AWT6172 数据手册

ꢁWt6172

GSM/GPRS/EDGE Power Ampliﬁer

Module wiꢄh Inꢄegraꢄed Power Conꢄrol

PꢃꢀLIMINꢁꢃY Dꢁtꢁ sHꢀꢀt - ꢃꢀv 1.4

PꢃODꢂCt DꢀsCꢃIPtION

Fꢀꢁtꢂꢃꢀs

This quad band power ampliﬁer module supports dual,

tri and quad band applications for both GMSK and

8-PSK modulation schemes. There are two ampliﬁer

chains, one to support GSM850/900 bands, the other

for DCS/PCS bands.

•ꢀ InGaP HBT Technology

•ꢀ Low proﬁle 1.1 mm

•ꢀ Small Package Outline 6 mm x 6 mm

•ꢀ EGPRS Capable (class 12)

•ꢀ Integrated Reference Voltage

GMsK MODꢀ

The module includes an integrated power control

scheme for use in the GMSK mode. This facilitates

fast and easy production calibration and reduces the

number of external components required to complete

a power control function. The ampliﬁer’s power control

range is typically 55 dB, with the output power set by

applying an analog voltage to V^RAMP.

•ꢀ Integrated power control (CMOS)

•ꢀ +35 dBm GSM850/900 Output Power

•

+33 dBm DCS/PCS Output Power

•ꢀ 55 % GSM850/900 PAE

52 % DCS/PCS PAE

•

•ꢀ Power control range > 50 dB

ꢀDGꢀ MODꢀ

•

+28.5 dBm GSM850/900 Output Power

+27.5 dBm DCS/PCS Output Power

In EDGE mode, the VRAMP pin is disabled and no spe-

ciﬁc voltage is required for proper operation. Output

power is controlled by varying the input power.

•ꢀ -66 dBc Typical ACPR (400 kHz)

•ꢀ -78 dBc Typical ACPR (600 kHz)

All of the RF ports for this device are internally matched

to 50Ω.

ꢁPPLICꢁtIONs

•

Dual/Tri/Quad Band Handsets, PDAs and Data

Devices

DCS/PCS_OUT

DCS/PCS_IN

GSM850/900_OUT

GSM850/900_IN

Figure 1: Block Diagram

02/2009

12 3 4 5 6 7...20

中文翻译

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