Datasheet > AWT6167R

AWT6167R

更新时间： 2024-11-18 03:19:55

品牌	Logo	应用领域
ANADIGICS		放大器功率控制功率放大器分布式控制系统 GSM DCS
页数	文件大小	规格书
12页	282K
描述
GSM900/DCS Dual Band Power Amplifier Module With Integrated Power Control

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AWT6167R 数据手册

AWT6167R

GSM900/DCS

Dual Band PowerAmplifier Module

With Integrated Power Control

PRELIMINARY DATASHEET - Rev 1.0

FEATURES

•

Integrated Vreg (regulated supply)

Harmonic Performance ≤ -20 dBm

High Efficiency (PAE) at Pmax:

-GSM900, 55%

-DCS, 53%

•

+35 dBm GSM900 Output Power at 3.5 V

T6167R

+33 dBm DCS Output Power at 3.5 V

55 dB Dynamic Range

GPRS Class 12 Capable

RoHS Compliant Package, 250°C MSL-3

APPLICATIONS

•

Dual/Tri/Quad Band Handsets & PDAs

M15 Package

18 Pin 6 mm x 6 mm x 1.3 mm

Amplifier Module

PRODUCT DESCRIPTION

As with previous generations, the AWT6167R

integrated CMOS power control scheme simplifies

the design of the transmitter by eliminating the need

for external power control circuitry.

reducing the number of external components

required in the final application. Both PAdie, GSM900

and DCS, are fabricated using state of the art InGaP

HBT technology, known for it is proven reliability and

temperature stability.

The AWT6167R input and output terminals are

internal matched to 50 ohms and DC blocked,

VCC2

MATCH

DCS_IN

DCS_OUT

CMOS BIAS/Integrated Power Control

H(s)

TX_EN

CC_OUT

BATT

EXT

RAMP

MATCH

GSM900_IN

GSM900_OUT

VCC2

Figure 1: Block Diagram

06/2005

12 3 4 5 6 7...12

中文翻译

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