Datasheet > AWT6166R

AWT6166R

更新时间： 2024-10-04 03:19:55

品牌	Logo	应用领域
ANADIGICS		放大器功率控制功率放大器过程控制系统分布式控制系统 PCS GSM DCS
页数	文件大小	规格书
12页	422K
描述
GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control

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AWT6166R 数据手册

AWT6166R

GSM850/GSM900/DCS/PCS

Quad Band PowerAmplifier Module

With Integrated Power Control

Data Sheet - Rev 2.0

FEATURES

•

Integrated Vreg (regulated supply)

Harmonic Performance ≤ -20 dBm

High Efficiency (PAE) at Pmax:

-GSM850, 53%

-GSM900, 55%

-DCS, 53%

-PCS, 53%

•

+35 dBm GSM850/900 Output Power at 3.5 V

+33 dBm DCS/PCS Output Power at 3.5 V

55 dB Dynamic Range

GPRS Class 12 Capable

RoHS Compliant Package, 250°C MSL-3

M15 Package

18 Pin 6 mm x 6 mm x 1.3 mm

Amplifier Module

APPLICATIONS

•

Dual/Tri/Quad Band Handsets & PDAs

PRODUCT DESCRIPTION

As with previous generations, the AWT6166R

integrated CMOS power control scheme simplifies

the design of the transmitter by eliminating the need

for external power control circuitry.

reducing the number of external components

required in the final application. Both PA die,

GSM850/900 and DCS/PCS, are fabricated using

state of the art InGaP HBT technology, known for it is

proven reliability and temperature stability.

The AWT6166R input and output terminals are

internal matched to 50 ohms and DC blocked,

V_CC2

DCS/PCS_IN

MATCH

DCS/PCS_OUT

B_S

CMOS BIAS/Integrated Power Control

H(s)

V_{CC_OUT}

V_BATT

C_EXT

V_RAMP

GSM850/900_IN

GSM850/900_OUT

MATCH

V_CC2

Figure 1: Block Diagram

02/2006

12 3 4 5 6 7...12

中文翻译

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