Datasheet > AWT6138M7P8

AWT6138M7P8

更新时间： 2024-11-17 22:05:59

品牌	Logo	应用领域
ANADIGICS		放大器功率放大器
页数	文件大小	规格书
8页	218K
描述
LINEAR POWER AMPLIFIER MODULE

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AWT6138M7P8 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.69	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	12 dB
最大输入功率 (CW)：	10 dBm	最大工作频率：	1910 MHz
最小工作频率：	1850 MHz	最高工作温度：	85 °C
最低工作温度：	-30 °C	射频/微波设备类型：	NARROW BAND MEDIUM POWER
最大电压驻波比：	2	Base Number Matches：	1

AWT6138M7P8 数据手册

AWT6138

HELP^TMPCS/CDMA 3.4V/28dBm

Linear PowerAmplifier Module

ADVANCED PRODUCT INFORMATION - Rev 0.0

FEATURES

InGaP HBT Technology

High Efficiency:

38% at +28 dBm

20% at +16 dBm

1.5% at 0 dBm

Low Quiescent Current: 20 mA

Low Leakage Current in Shutdown Mode: <1 mA

VREF = +2.85 V (+2.7 V min over temp)

Low Profile Surface Mount Package: 1.56mm Max

CDMA 1XRTT and 1xEV-DO Compliant

APPLICATIONS

M7 Package

10 Pin 4mm x 4mm

Surface Mount Module

PCS CDMA Wireless Handsets

Dual Band CDMA Wireless Handsets

PRODUCT DESCRIPTION

The AWT6138 PCS CDMA Power Amplifier is a high

performance CDMA2000/ 1XRTT amplifier designed

specifically for PCS wireless applications. This

rugged, easy to use InGaP HBT design delivers

state of the art efficiency and temperature stability

with very low DC power consumption. The

AWT6138 PA module has the lowest CDG currents

available to handset manufacturers today.

handset. The device has mode-switching to take

advantage of its high efficiency operation over a wide

range of output powers. Higher low power efficiency

is achieved without an external DAC or DC-DC

converter. The integrated power amplifier module

employs a proprietary bias control and temperature

compensation circuit that assures stable operation,

even at extreme temperature conditions.

A combination of low idle current and mode

switching enables the AWT6138 to deliver

unparalleled CDMA average power efficiencies.

This bias feature allows theAWT6138 to significantly

increase the battery usage time of a mobile

The self contained 4mm x 4mm surface mount

package incorporates matching networks optimized

for output power, efficiency and linearity in a 50[ohm]

system making it easy to incorporate the device into

BOTH new and existing designs.

GND at slug (pad)

VCC

RFIN

GND

RFOUT

GND

Bias Control

MODE

REF

Figure 1: Block Diagram

09/2003

12 3 4 5 6 7 8

中文翻译

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AWT6167	ANADIGICS	获取价格	GSM900/DCS Dual Band Power Amplifier Module With Integrated Power Control
AWT6167R	ANADIGICS	获取价格	GSM900/DCS Dual Band Power Amplifier Module With Integrated Power Control
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