Datasheet > AWT6136RM5P9

AWT6136RM5P9

更新时间： 2024-11-18 06:38:47

品牌	Logo	应用领域
ANADIGICS		放大器射频微波功率放大器
页数	文件大小	规格书
9页	385K
描述
450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module

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技术参数
数据手册

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AWT6136RM5P9 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	unknown	风险等级：	5.67
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	25 dB	最大输入功率 (CW)：	10 dBm
最大工作频率：	460 MHz	最小工作频率：	450 MHz
最高工作温度：	90 °C	最低工作温度：	-10 °C
射频/微波设备类型：	NARROW BAND MEDIUM POWER	最大电压驻波比：	2
Base Number Matches：	1

AWT6136RM5P9 数据手册

AWT6136

450 MHz CDMA 3.4V/29.5dBm

Linear Power Ampliﬁer Module

Data Sheet - Rev 2.0

FEATURES

•

InGaP HBT Technology

High Efﬁciency 37% CDMA

Low Receive Band Noise (NR^X) -132 dBm/Hz @

10 MHz offset

•

Low Leakage Current (<5 µA)

SMT Module Package

50 Ω Input and Output Matching

Shut Down and Mode Control

CDMA 2000 1XRTT Compliant

RoHS Compliant Package 250 ^oC MSL-3

T6136

APPLICATIONS

•

CDMA/EVDO 450 MHz Wireless Handsets and

Data Devices

M5 Package

7 Pin 6 mm x 6 mm x 1.5 mm

Surface Mount Module

PRODUCT DESCRIPTION

TheAWT6136 is a high power, high efﬁciency ampliﬁer

module for CDMAwireless handset applications. The

device is manufactured on an advanced InGaP HBT

MMIC technology offering state-of-the-art reliability,

temperature stability and ruggedness. A low power

mode is available to reduce power drain on the

system battery. The 6 mm x 6 mm x 1.5 mm laminate

package is self contained, incorporating 50 Ω input

and output matching networks optimized for output

power, linearity, and efﬁciency.

GND at slug (pad)

VCC

GND

RFIN

RF^OUT

Bias Control

VREF

VCC

V^MODE

Figure 1: Block Diagram

10/2008

12 3 4 5 6 7...9

中文翻译

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