Datasheet > AWT6135

AWT6135

更新时间： 2024-11-17 21:54:27

品牌	Logo	应用领域
ANADIGICS		放大器功率放大器过程控制系统 PCS
页数	文件大小	规格书
8页	261K
描述
PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module

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AWT6135 数据手册

AWT6135

PCS/CDMA 3.4V/28dBm

Linear Power Amplifier Module

PRELIMINARY DATA SHEET - Rev 1.1

FEATURES

•

InGaP HBT Technology

High Efficiency: 40%

Low Quiescent Current: 48 mA

Low Leakage Current in Shutdown Mode: <1 µA

VREF = +2.8 V (+2.7 V min over temp)

Optimized for a 50 Ω System

Low Profile Miniature Surface Mount Package:

1.56mm Max

•

CDMA 1XRTT Compliant

CDMA 1xEV-DO Compliant

APPLICATIONS

M7 Package

•

PCS CDMA Wireless Handsets

10 Pin 4mm x 4mm

Surface Mount Module

•

Dual Band CDMA Wireless Handsets

PRODUCT DESCRIPTION

The AWT6135 meets the increasing demands for

higher efficiency and linearity in CDMA 1XRTT

handsets. The PA module is optimized for V^REF= +2.8 V,

a requirement for compatibility with the Qualcomm®

6000 chipset. The device is manufactured on an

advanced InGaP HBT MMIC technology offering

state-of-the-art reliability, temperature stability, and

ruggedness. Selectable bias modes that optimize

efficiency for different output power levels, and a

shutdown mode with low leakage current, increase

handset talk and standby time. The self-contained

4mm x 4mm surface mount package incorporates

matching networks optimized for output power,

efficiency, and linearity in a 50 Ω system.

GND at slug (pad)

VCC

RFIN

GND

RFOUT

GND

Bias Control

MODE

REF

Figure 1: Block Diagram

08/2003

12 3 4 5 6 7 8

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