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AWT6134M7P8 PDF预览

AWT6134M7P8

更新时间: 2024-11-16 22:05:59
品牌 Logo 应用领域
ANADIGICS 放大器功率放大器过程控制系统PCS
页数 文件大小 规格书
12页 277K
描述
KPCS/CDMA 3.4V/28dBm Linear Power Amplifier Module

AWT6134M7P8 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred包装说明:HLSON,
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.92JESD-30 代码:S-XDSO-N10
JESD-609代码:e0长度:4 mm
功能数量:1端子数量:10
封装主体材料:UNSPECIFIED封装代码:HLSON
封装形状:SQUARE封装形式:SMALL OUTLINE, HEAT SINK/SLUG, LOW PROFILE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.56 mm标称供电电压:3.4 V
表面贴装:YES电信集成电路类型:RF AND BASEBAND CIRCUIT
端子面层:Tin/Lead (Sn/Pb)端子形式:NO LEAD
端子节距:0.85 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:4 mm

AWT6134M7P8 数据手册

 浏览型号AWT6134M7P8的Datasheet PDF文件第2页浏览型号AWT6134M7P8的Datasheet PDF文件第3页浏览型号AWT6134M7P8的Datasheet PDF文件第4页浏览型号AWT6134M7P8的Datasheet PDF文件第5页浏览型号AWT6134M7P8的Datasheet PDF文件第6页浏览型号AWT6134M7P8的Datasheet PDF文件第7页 
AWT6134  
KPCS/CDMA 3.4V/28dBm  
Linear Power Amplifier Module  
PRELIMINARY DATA SHEET - Rev 1.0  
FEATURES  
InGaP HBT Technology  
High Efficiency: 39%  
Low Quiescent Current: 48 mA  
Low Leakage Current in Shutdown Mode: <1 µA  
VREF = +2.8 V (+2.7 V min over temp)  
Optimized for a 50 System  
Low Profile Miniature Surface Mount Package:  
1.56mm Max  
CDMA 1XRTT Compliant  
CDMA 1xEV-DO Compliant  
APPLICATIONS  
M7 Package  
Korean PCS CDMA Wireless Handsets  
10 Pin 4mm x 4mm  
Surface Mount Module  
PRODUCT DESCRIPTION  
The AWT6134 meets the increasing demands for  
higher efficiency and linearity in CDMA 1XRTT  
handsets. The PA module is optimized for VREF = +2.8 V,  
a requirement for compatibility with the Qualcomm  
6000 chipset. The device is manufactured on an  
advanced InGaP HBT MMIC technology offering  
state-of-the-art reliability, temperature stability, and  
ruggedness. Selectable bias modes that optimize  
efficiency for different output power levels, and a  
shutdown mode with low leakage current, increase  
handset talk and standby time. The self-contained  
4mm x 4mm surface mount package incorporates  
matching networks optimized for output power,  
efficiency, and linearity in a 50 system.  
GND at slug (pad)  
1
2
3
4
5
10  
9
V
CC  
VCC  
RFIN  
GND  
RFOUT  
GND  
GND  
8
GND  
Bias Control  
7
V
MODE  
6
V
REF  
Figure 1: Block Diagram  
07/2003  

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