Datasheet > AWT6133M7P8

AWT6133M7P8

更新时间： 2024-11-17 03:19:55

品牌	Logo	应用领域
ANADIGICS		放大器射频微波功率放大器过程控制系统 PCS
页数	文件大小	规格书
8页	269K
描述
PCS/CDMA 3.5V/29dBm Linear Power Amplifier Module

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中文翻译

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技术参数
数据手册

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AWT6133M7P8 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.72	Is Samacsys：	N
其他特性：	HIGH RELIABILITY	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	22 dB
最大输入功率 (CW)：	10 dBm	最大工作频率：	1910 MHz
最小工作频率：	1850 MHz	最高工作温度：	85 °C
最低工作温度：	-30 °C	射频/微波设备类型：	NARROW BAND MEDIUM POWER
最大电压驻波比：	2	Base Number Matches：	1

AWT6133M7P8 数据手册

AWT6133

PCS/CDMA 3.5V/29dBm

Linear PowerAmplifier Module

Data Sheet - Rev 2.0

FEATURES

•

InGaP HBT Technology

High Efficiency: 38%

Low Quiescent Current: 50 mA

Low Leakage Current in Shutdown Mode: <1 µA

VREF = +2.85 V (+2.7 V min over temp)

Optimized for a 50 Ω System

Low Profile Miniature Surface Mount Package:

1.56 mm Max

•

CDMA 1XRTT Compliant

CDMA 1xEV-DO Compliant

APPLICATIONS

M7 Package

•

PCS CDMA Wireless Handsets

10 Pin 4 mm x 4 mm x 1.5 mm

Surface Mount Module

Dual Band CDMA Wireless Handsets

PRODUCT DESCRIPTION

The AWT6133 meets the increasing demands for

higher efficiency and linearity in CDMA 1XRTT

handsets. The PAmodule is optimized for V^REF= +2.85 V,

a requirement for compatibility with the Qualcomm®

6000 chipset. The device is manufactured on an

advanced InGaP HBT MMIC technology offering

state-of-the-art reliability, temperature stability, and

ruggedness. Selectable bias modes that optimize

efficiency for different output power levels, and a

shutdown mode with low leakage current, increase

handset talk and standby time. The self-contained

4 mm x 4 mm x 1.5 mm surface mount package

incorporates matching networks optimized for output

power, efficiency, and linearity in a 50 Ω system.

GND at slug (pad)

VCC

RFIN

GND

RFOUT

GND

Bias Control

MODE

REF

Figure 1: Block Diagram

12/2004

12 3 4 5 6 7 8

中文翻译

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